Datasheet

Features
• Floating channel designed for bootstrap operation
• Fully operational to +600V
• Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/- 200 mA / 420 mA
V
OUT
10 - 20V
t
on/off
(typ.) 125 & 105 ns
Delay Matching 30 ns
www.irf.com 1
Data Sheet No. PD60026 revS
IR2112
(
-1-2
)(
S
)
PbF
Description
The IR2112(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugge-
dized monolithic construction. Logic inputs are com-
patible with standard CMOS or LSTTL outputs, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use in high frequency applications. The floating channel can be
used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600
volts.
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(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.
Please refer to our Application Notes and DesignTips for proper circuit board layout.
Typical Connection
Packages
14-Lead PDIP
16-Lead SOIC (wide body)