Datasheet

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Typical Connection

HALF-BRIDGE DRIVER

Features

•

Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

•

Gate drive supply range from 10 to 20V

•

Undervoltage lockout for both channels

•

3.3V, 5V and 15V input logic compatible

•

Cross-conduction prevention logic

•

Matched propagation delay for both channels

•

High side output in phase with HIN input

•

Low side output out of phase with

LIN

input

•

Logic and power ground +/- 5V offset.

•

Internal 540ns dead-time, and

programmable up to 5us with one

external R

resistor (IR21084)

•

Lower di/dt gate driver for better

noise immunity

IR21084

IR2108

LOCOM

HIN

LIN

HIN

up to 600V

LOAD

HIN

up to 600V

LOAD

COM

HIN

LIN

Data Sheet No. PD60161-O

IR2108

(

)

(

)

www.irf.com 1

(Refer to Lead Assignments for correct pin

configuration). This/These diagram(s) show

electrical connections only. Please refer to our

Application Notes and DesignTips for proper

circuit board layout.

Packages

14-Lead PDIP

IR21084

8-Lead SOIC

IR2108S

8-Lead PDIP

IR2108

14-Lead SOIC

IR21084S

Description

The IR2108(4)(S) are high voltage, high speed power

MOSFET and IGBT drivers with dependent high and

low side referenced output channels. Proprietary

HVIC and latch immune CMOS technologies enable

ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to

3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-

conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side

configuration which operates up to 600 volts.

Part

Input

logic

Cross-

conduction

prevention

logic

Dead-Time Ground Pins

2106

COM

21064

HIN/LIN no none

VSS/COM

2108 Internal 540ns COM

21084

HIN/LIN yes

Programmable 0.54~5

VSS/COM

2109 Internal 540ns COM

21094

IN/SD yes

Programmable 0.54~5

VSS/COM

2106//2108//2109/2304 Feature Comparison

2304

HIN/LIN

yes

Internal 100ns

COM

Summary of content (8 pages)

PAGE 1
Data Sheet No. PD60161-O IR2108(4) (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.
PAGE 2
IR2108(4) (S) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition VB High side floating absolute voltage VS Min. Max. -0.3 625 Units High side floating supply offset voltage VB - 25 VB + 0.
PAGE 3
IR2108(4) (S) Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, VSS = COM, CL = 1000 pF, TA = 25°C, DT = VSS unless otherwise specified. Symbol Definition Min. Typ. Max.
PAGE 4
IR2108(4) (S) Functional Block Diagram VB UV DETECT 2108 HO R HV LEVEL SHIFTER VSS/COM LEVEL SHIFT HIN DT R PULSE FILTER Q S VS PULSE GENERATOR VCC DEADTIME & SHOOT-THROUGH PREVENTION UV DETECT +5V VSS/COM LEVEL SHIFT LIN LO DELAY COM VSS VB 21084 UV DETECT HO R VSS/COM LEVEL SHIFT HIN HV LEVEL SHIFTER Q S VS PULSE GENERATOR VCC DEADTIME & SHOOT-THROUGH PREVENTION DT UV DETECT +5V LIN R PULSE FILTER VSS/COM LEVEL SHIFT DELAY LO COM VSS 4 www.irf.
PAGE 5
IR2108(4) (S) Lead Definitions Symbol Description HIN Logic input for high side gate driver output (HO), in phase (referenced to COM for IR2108 and VSS for IR21084) LIN Logic input for low side gate driver output (LO), out of phase (referenced to COM for IR2108 DT Programmable dead-time lead, referenced to VSS.
PAGE 6
IR2108(4) (S) HIN LIN LIN HO 50% 50% tr toff LO ton Figure 1. Input/Output Timing Diagram 90% tf 90% 10% LO 10% 50% 50% HIN ton toff tr 90% HO HIN LIN 50% 10% tf 90% 10% 50% Figure 2. Switching Time Waveform Definitions 90% HO LO DTLO-HO 10% DT HO-LO 90% 10% MDT= DTLO-HO - DT HO-LO Figure 3. Deadtime Waveform Definitions 6 www.irf.
PAGE 7
IR2108(4) (S) Case outlines 01-6014 01-3003 01 (MS-001AB) 8-Lead PDIP D DIM B 5 A FOOT PRINT 8 7 6 5 6 H E 0.25 [.010] 1 6X 2 3 A 4 6.46 [.255] e 3X 1.27 [.050] 8X 1.78 [.070] MILLIMETERS MAX MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC e1 A 8X 0.72 [.028] INCHES MIN MAX 1.27 BAS IC .025 BAS IC 0.635 BAS IC H .2284 .2440 5.80 6.
PAGE 8
IR2108(4) (S) 14-Lead PDIP 14-Lead SOIC (narrow body) 01-6010 01-3002 03 (MS-001AC) 01-6019 01-3063 00 (MS-012AB) IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/6/2002 8 www.irf.