Datasheet

BUZ 30A H
Rev. 2.5 Page 7 2010-07-02
Gate threshold voltage
V
GS (th)
=
ƒ
( T
j
)
parameter:
V
GS
=
V
DS
,
I
D
= 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60
-20
20
60
100
˚C
160
T
j
2%
typ
98%
Drain-source on-resistance
R
DS (on)
=
ƒ
( T
j
)
parameter:
I
D
= 13.5 A,
V
GS
= 10 V
-60
-20
20
60
100
˚C
160
T
j
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
Ω
0.50
R
DS (on)
typ
98%
Typ. capacitances
C = f ( V
DS
)
parameter:
V
GS
= 0V,
f = 1MHz
0
5
10
15
20
25
30
V
40
V
DS
-2
10
-1
10
0
10
1
10
nF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F
=
ƒ
( V
SD
)
parameter:
T
j
, t
p
= 80 µs
-1
10
0
10
1
10
2
10
A
I
F
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
T
j
= 25 ˚C typ
T
j
= 25 ˚C (98%)
T
j
= 150 ˚C typ
T
j
= 150 ˚C (98%)