Datasheet

BUZ 30A H
Rev. 2.5 Page 6 2010-07-02
Typ. output characteristics
I
D
=
ƒ(
V
DS
)
parameter:
t
p
= 80 µs
0
2
4
6
8
V
11
V
DS
0
5
10
15
20
25
30
35
40
A
50
I
D
V
GS
[V]
a
a 4.0
b
b 4.5
c
c 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
P
tot
= 125W
l 20.0
Typ. drain-source on-resistance
R
DS (on)
=
ƒ(
I
D
)
parameter:
V
GS
0
4
8
12
16
20
24
28
32
A
40
I
D
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
Ω
0.40
R
DS (on)
V
GS
[V] =
a
a
4.0
b
b
4.5
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
g
7.0
h
h
7.5
i
i
8.0
j
j
9.0
k
k
10.0
l
l
20.0
Typ. transfer characteristics
I
D
=
f
(
V
GS
)
parameter:
t
p
= 80 µs
V
DS
≥ 2 x I
D
x
R
DS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
5
10
15
20
25
30
35
A
45
I
D
Typ. forward transconductance
g
fs
=
f
( I
D
)
parameter:
t
p
= 80 µs,
V
DS
≥ 2 x I
D
x R
DS(on)max
0
5
10
15
20
25
30
A
40
I
D
0
2
4
6
8
10
12
14
16
S
20
g
fs