Datasheet
Data Sheet 10 Rev 1.3, 2010-03-16
Smart High-Side Power Switch
BTS712N1
GND disconnect
(channel 1/2 or 3/4)
352)(7
9
,1
67
287
*1'
EE
9
EE
,
EE
,1
287
9
,1
9
,1
9
67
9
*1'
Any kind of load. In case of IN= high is
V
OUT
≈
V
IN
-
V
IN(T+)
.
Due to V
GND
> 0, no V
ST
= low signal available.
GND disconnect with GND pull up
(channel 1/2 or 3/4)
352)(7
9
,1
67
287
*1'
EE
9
EE
,1
287
9
,1
9
,1
9
67
9
*1'
Any kind of load. If V
GND
>
V
IN
-
V
IN(T+)
device stays off
Due to V
GND
> 0, no V
ST
= low signal available.
V
bb
disconnect with energized inductive
load
352)(7
9
,1
67
287
*1'
EE
9
EE
,1
287
KLJK
For an inductive load current up to the limit defined by E
AS
(max. ratings see page 3 and diagram on page 9) each
switch is protected against loss of V
bb
.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load the whole load
current flows through the GND connection.
Inductive load switch-off energy
dissipation
352)(7
9
,1
67
287
*1'
EE
(
(
(
(
$6
EE
/
5
(
/RDG
5
/
/
^
/
=
Energy stored in load inductance:
E
L
=
1
/
2
·
L
·
I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
=
V
ON(CL)
·
i
L
(t) dt,
with an approximate solution for R
L
> 0 Ω:
E
AS
=
I
L
·L
2
·R
L
(
V
bb
+|V
OUT(CL)
|)
OQ
(1+
I
L
·R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off
(one channel)
5)
/ I,
/
T
j,start
= 150°C, V
bb
= 12 V, R
L
=0Ω
L [mH]
I
L
[A]