Smart High-Side Power Switch Smart High-Side Power Switch PROFET BTS712N1 Data Sheet Rev 1.
Smart High-Side Power Switch BTS712N1 Smart Four Channel Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in OFF-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Ele
Smart High-Side Power Switch BTS712N1 Block diagram Four Channels; Open Load detection in off state; 9ROWDJH VRXUFH 2YHUYROWDJH SURWHFWLRQ &XUUHQW OLPLW *DWH SURWHFWLRQ 9 /RJLF ,1 ,1 67 6LJQDO *1' &KLS (6' 9ROWDJH /HYHO VKLIWHU VHQVRU 5HFWLILHU /RJLF &KDUJH SXPS &KDUJH SXPS /HYHO VKLIWHU 5HFWLILHU *1' /LPLW IRU XQFODPSHG LQG ORDGV &KDQQHO 9 EE /HDGIUDPH 287 287 7HPSHUDWXUH VHQVRU 2SHQ ORDG 6KRUW WR 9EE GHWHFWLRQ &XUUHQW OLPLW
Smart High-Side Power Switch BTS712N1 Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Symbol Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj,start = -40 ...+150°C Load current (Short-circuit current, see page 5) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 Ω, td = 200 ms; IN = low or high, each channel loaded with RL = 7.
Smart High-Side Power Switch BTS712N1 Electrical Characteristics Parameter and Conditions, each of the four channels Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT) each channel, Tj = 25°C: RON IL = 1.
Smart High-Side Power Switch BTS712N1 Parameter and Conditions, each of the four channels Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Standby current, all channels off Tj =25°C: Ibb(off) VIN = 0 Tj =150°C: 9) Operating current , VIN = 5V, Tj =-40...+150°C IGND = IGND1/2 + IGND3/4, one channel on: IGND four channels on: Values min typ max Unit --- 180 160 300 300 µA --- 0.35 1.2 0.8 2.
Smart High-Side Power Switch BTS712N1 Parameter and Conditions, each of the four channels Symbol Values min typ max RI 2.5 3.5 6 kΩ VIN(T+) 1.7 -- 3.5 V VIN(T-) 1.5 -- -- V ∆ VIN(T) VIN = 0.4 V: IIN(off) -1 0.5 -- -50 V µA VIN = 5 V: IIN(on) 20 50 90 µA td(ST OL3) -- 220 -- µs Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) Tj =-40...+25°C, IST = +1.6 mA: VST(low) ST low voltage Tj = +150°C, IST = +1.6 mA: 5.4 --- 6.1 --- -0.4 0.
Smart High-Side Power Switch BTS712N1 Truth Table Channel 1 and 2 Channel 3 and 4 (equivalent to channel 1 and 2) Chip 1 Chip 2 Normal operation Open load Channel 1 (3) Channel 2 (4) Short circuit to Vbb Channel 1 (3) Channel 2 (4) Overtemperature both channel Channel 1 (3) Channel 2 (4) Undervoltage/ Overvoltage L = "Low" Level H = "High" Level IN1 IN3 IN2 IN4 OUT1 OUT3 OUT2 OUT4 L L H H L L H L H L H L H X L L H H Z Z H L H L H L H X L H X L L H L L H L H X L H X H H H Z Z H L H X
Smart High-Side Power Switch BTS712N1 Overvoltage protection of logic part Input circuit (ESD protection), IN1...4 GND1/2 or GND3/4 ,1 5 9 EE , (6' =' , , , = ,1 /RJLF *1' 67 5 67 9 ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). = *1' 5 *1' 6LJQDO *1' Status output, ST1/2 or ST3/4 VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ.
Smart High-Side Power Switch BTS712N1 Inductive load switch-off energy dissipation GND disconnect (channel 1/2 or 3/4) ( EE 9 ( $6 ,EE EE ,1 9EE ,1 352)(7 287 352)(7 287 67 9 287 / 67 *1' 9 9 ,1 ,1 67 (/RDG 9EE ,1 *1' =/ 9 *1' ^ 5 (/ (5 / Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+). Due to VGND > 0, no VST = low signal available.
Smart High-Side Power Switch BTS712N1 Typ. ground pin operating current Typ. on-state resistance VIN = high (one channel on) ; IL = 1.8 A, IN = high IGND [mA] RON [mOhm] Vbb [V] Vbb [V] Typ. standby current Typ. initial short circuit shutdown time ; Vbb =12 V ; Vbb = 9...34 V, IN1...4 = low Ibb(off) [µA] t off(S C ) [ms ec ] 60 50 40 30 20 10 0 40 Tj [°C] Ibb(off) includes four times the current IL(off) of the open load detection current sources.
Smart High-Side Power Switch BTS712N1 Timing diagrams Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams are valid too.
Smart High-Side Power Switch BTS712N1 Figure 5a: Open load: detection in OFF-state, turn on/off to open load Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2) ,1 ,1 ,1 FKDQQHO QRUPDO RSHUDWLRQ , , / / , / 6&S 9287 , / 6&U , / FKDQQHO RSHQ ORDG W 67 RII 6& W 67 G 67 2/ W d(ST OL3) W W td(ST,OL3) depends on external circuitry because of high impedance *) IL = 30 µA typ Figure 4a:
Smart High-Side Power Switch BTS712N1 Figure 6b: Undervoltage restart of charge pump RII VWDWH RQ VWDWH 9 9 EE X UVW 9 9 9 EE RYHU RII VWDWH 921 &/ 9 RQ EE R UVW EE X FS EE XQGHU 9 EE IN = high, normal load conditions. Charge pump starts at Vbb(ucp) = 5.6 V typ. Figure 7a: Overvoltage: ,1 9bb V ON(CL) Vbb(over) V bb(o rst) 9 287 67 W Data Sheet 14 Rev 1.
Smart High-Side Power Switch BTS712N1 1.27 0.35 8˚ ma x 7.6 -0.2 1) +0.09 0.35 x 45˚ 0.23 2.65 max 2.45 -0.2 0.2 -0.1 Package Outlines 0.4 +0.8 +0.15 2) 0.2 24x 20 0.1 10.3 ±0.3 11 GPS05094 1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.
Smart High-Side Power Switch BTS712N1 Revision History Version Date Changes Rev 1.3 2010-03-16 page 6: changed reference to the timing diagram Rev 1.2 2009-07-13 page 1: added new coverpage page 6: Initial short circuit shutdown time changed: toff(SC) -40 °C to 48 ms toff(SC) 25 °C to 29 ms page 11: changed graphic V1.1 2007-08-30 Creation of the green datasheet.
Edition 2010-03-16 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 3/16/10. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).
