Datasheet

Data Sheet BTS555
Infineon Technologies AG 4 2010-June-01
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, V
bb
= 12 V unless otherwise specified
min typ max
Inverse Load Current Operation
On-state resistance (Pins 1,5 to pin 3)
V
bIN
= 12 V, I
L
= - 30 A T
j
= 25 °C:
see description on page 10 T
j
= 150 °C:
R
ON(inv)
-- 1.9
3.3
2.5
4.0
mΩ
Nominal inverse load current (Pins 1,5 to Tab)
V
ON
= -0.5 V, T
c
= 85 °C
10
I
L(inv)
128 165 -- A
Drain-source diode voltage (V
out
> V
bb
)
I
L
=
-
20 A,
I
IN
= 0,
Tj = +150°C
-V
ON
-- 0.6 0.7 V
Operating Parameters
Operating voltage (V
IN
= 0)
12)
V
bb(on)
5.0 -- 34 V
Undervoltage shutdown
13)
V
bIN(u)
1.5 3.0 4.5 V
Undervoltage start of charge pump
see diagram page 15 V
bIN(ucp)
3.0 4.5 6.0 V
Overvoltage protection
14)
T
j
=-40°C:
I
bb
= 15 mA T
j
= 25...+150°C:
V
bIN(Z)
60
62
--
66
--
--
V
Standby current T
j
=-40...+25°C:
I
IN
= 0 T
j
= 150°C:
I
bb(off)
--
--
15
25
25
50
µA
12)
If the device is turned on before a V
bb
-decrease, the operating voltage range is extended down to V
bIN(u)
.
For all voltages 0 ... 34 V the device provides embedded protection functions against overtemperature and
short circuit.
13)
V
bIN
= V
bb
- V
IN
see diagram on page 7. When V
bIN
increases from less than V
bIN(u)
up to V
bIN(ucp)
= 5 V
(typ.) the charge pump is not active and V
OUT
≈V
bb
- 3 V.
14)
See also V
ON(CL)
in circuit diagram on page 8.