Datasheet

Data Sheet BTS555
Infineon Technologies AG 3 2010-June-01
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case:
R
thJC
7
)
-- -- 0.35
K/W
junction - ambient (free air): R
thJA
--
30 --
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, V
bb
= 12 V unless otherwise specified
min typ max
Load Switching Capabilities and Characteristics
On-state resistance
(Tab to pins 1,5, see measurement
circuit page 7)
I
L
= 30 A, T
j
= 25 °C:
V
IN
= 0, I
L
= 30 A, T
j
= 150 °C:
R
ON
--
--
1.9
3.3
2.5
4.0
mΩ
I
L
= 120 A, T
j
= 150 °C: -- -- 4.0
V
bb
= 6 V
8)
, I
L
= 20 A, T
j
= 150 °C: R
ON(Static)
-- 4.6 9.0
Nominal load current
9)
(Tab to pins 1,5)
ISO 10483-1/6.7: V
ON
= 0.5 V, T
c
= 85 °C
10)
I
L(ISO)
128 165 -- A
Maximum load current in resistive range
(Tab to pins 1,5) V
ON
= 1.8 V, T
c
= 25 °C:
see diagram on page 13 V
ON
= 1.8 V, T
c
= 150 °C:
I
L(Max)
520
360
--
--
--
--
A
Turn-on time
11)
I
IN
to 90% V
OUT
:
Turn-off time I
IN
to 10% V
OUT
:
R
L
= 1 Ω , T
j
=-40...+150°C
t
on
t
off
120
50
--
--
600
200
µs
Slew rate on
11)
(10 to 30% V
OUT
)
R
L
= 1 Ω
dV/dt
on
0.3 0.5 0.8 V/µs
Slew rate off
11)
(70 to 40% V
OUT
)
R
L
= 1 Ω
-dV/dt
off
0.3 0.7 1 V/µs
7)
Thermal resistance R
thCH
case to heatsink (about 0.25 K/W with silicone paste) not included!
8)
Decrease of V
bb
below 10 V causes slowly a dynamic increase of R
ON
to a higher value of R
ON(Static)
. As
long as V
bIN
> V
bIN(u) max
, R
ON
increase is less than 10 % per second for T
J
< 85 °C.
9)
not subject to production test, specified by design
10)
T
J
is about 105°C under these conditions.
11)
See timing diagram on page 14.