Datasheet

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PROFET

Data Sheet BTS555

Infineon Technologies AG 1 of 16 2010-June-01

Smart Highside High Current Power Switch

Reversave

•

Reverse battery protection by self turn on of

power MOSFET

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Overtemperature protection

•

Overvoltage protection (including load dump)

•

Clamp of negative voltage at output

•

Fast deenergizing of inductive loads

•

Low ohmic inverse current operation

•

Diagnostic feedback with load current sense

•

Open load detection via current sense

•

Loss of V

protection

•

Electrostatic discharge (ESD) protection

•

Green Product (RoHS compliant)

•

AEC qualified

Application

•

Power switch with current sense diagnostic feedback for 12

V and 24 V DC grounded loads

•

Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads

•

Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS



chip on chip technology. Providing embedded protective functions.

Charge pump

Level shifter

Rectifier

Limit for

unclamped

ind. loads

Gate

protection

Current

limit

Overvoltage

protection

+ V

PROFET



OUT

3 & Tab

1, 5

Load GND

Load

Output

Voltage

detection

Logic GND

Voltage

sensor

Voltage

source

Current

Sense

Logic

ESD

Temperature

sensor

)

With additional external diode.

Additional external diode required for energized inductive loads (see page 9).

Product Summary

Overvoltage protection V

bb(AZ)

62 V

Output clamp

ON(CL)

Operating voltage

bb(on)

5.0 ... 34 V

On-state resistance R

2.5

mΩ

Load current (ISO) I

L(ISO)

165 A

Short circuit current limitation I

L(SCp)

520 A

Current sense ratio I

30 000

PG-TO218-5-146

Straight leads

Summary of content (16 pages)

PAGE 1
PROFET® Data Sheet BTS555 Smart Highside High Current Power Switch Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Reversave • Reverse battery protection by self turn on of power MOSFET Features • Overload protection • Current limitation • Short circuit protection • Overtemperature protection • Overvoltage protection (including load dump) • Clamp of negative voltage at output • Fast deener
PAGE 2
Data Sheet BTS555 Pin Symbol 1 OUT 2 IN 3 Vbb 4 IS 5 OUT Function Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!3) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin4).
PAGE 3
Data Sheet BTS555 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case: RthJC7) junction - ambient (free air): RthJA min --- Values typ max -- 0.35 30 -- Unit K/W Electrical Characteristics Parameter and Conditions Symbol at Tj = -40 ...
PAGE 4
Data Sheet BTS555 Parameter and Conditions Symbol at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) VbIN = 12 V, IL = - 30 A Values min typ max 2.5 4.0 -- mΩ 128 1.9 3.3 165 -- 0.6 0.7 V Vbb(on) VbIN(u) 5.0 1.5 -3.0 34 4.5 V V VbIN(ucp) VbIN(Z) 3.0 60 62 --- 4.5 -66 15 25 6.
PAGE 5
Data Sheet BTS555 Parameter and Conditions Symbol at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Protection Functions15) Short circuit current limit (Tab to pins 1,5)16) VON = 12 V, time until shutdown max. 300 µs Tc =-40°C: IL(SCp) Tc =25°C: Tc =+150°C: Short circuit shutdown delay after input current positive slope, VON > VON(SC) td(SC) min.
PAGE 6
Data Sheet BTS555 Parameter and Conditions Symbol at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified Diagnostic Characteristics Current sense ratio, IL = 120 A,Tj =-40°C: kILIS static on-condition, Tj =25°C: kILIS = IL : IIS, Tj =150°C: VON < 1.5 V19), IL = 30 A,Tj =-40°C: VIS 4.
PAGE 7
Data Sheet BTS555 Truth Table Remark Input current Output Current Sense level level L H L H IIS 0 nominal H H IIS, lim H H 0 L H L H L H L H L L L L L H H Z23) H L 0 0 0 0 0 VON(Fold back
PAGE 8
Data Sheet BTS555 Input circuit (ESD protection) Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 µs). V bb + Vbb R bb ZD V Z,IN V bIN VON IN I IN OUT Short circuit detection Logic unit V IN Inductive and overvoltage output clamp When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ).
PAGE 9
Data Sheet BTS555 Version b: Reverse battery protection - Vbb R bb V IN IN OUT R IN Power Transistor Logic D R IS PROFET OUT IS IS DS Vbb bb V Zb RL RV Signal GND Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb. Power GND Version c: Sometimes a neccessary voltage clamp is RV ≥ 1 kΩ, RIS = 1 kΩ nominal.
PAGE 10
Data Sheet BTS555 Inverse load current operation Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω Vbb V bb 1000000 - IL IN + PROFET OUT 100000 V OUT + IS - IIS V IN V IS - R IS 10000 1000 The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g.
PAGE 11
Data Sheet BTS555 Options Overview Type BTS Overtemperature protection with hysteresis Tj >150 °C, latch function24) Tj >150 °C, with auto-restart on cooling Short circuit to GND protection 555 X X with overtemperature shutdown switches off when VON>6 V typ. (when first turned on after approx. 180 µs) X Overvoltage shutdown - Output negative voltage transient limit to Vbb - VON(CL) to VOUT = -15 V typ X X25) 24) Latch except when Vbb -VOUT < VON(SC) after shutdown.
PAGE 12
Data Sheet BTS555 Characteristics Current sense versus load current: IIS = f(IL) IIS [mA] Current sense ratio: KILIS = f(IL), TJ = 25 °C kilis 65000 7 60000 6 55000 5 max 50000 4 45000 40000 3 min max 35000 2 typ 30000 1 25000 min 0 20000 0 50 100 150 0 50 100 150 IL [A] IL [A] Current sense ratio: KILIS = f(IL), TJ = -40 °C kilis Current sense ratio: KILIS = f(IL), TJ = 150 °C kilis 65000 65000 60000 60000 55000 55000 50000 50000 45000 45000 40000 40000 max 35000
PAGE 13
Data Sheet BTS555 Typ. current limitation characteristic IL = f (VON, Tj) Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] IL [A] 1000 1.6 900 1.4 800 1.2 700 VON >VON(SC) only for t < t d(SC) 600 (otherwise immediate shutdown) 1.0 0.8 500 Tj = -40°C 400 25°C 0.6 150°C 0.4 85°C 300 200 0.2 100 0 0 0 VON(FB) 10 15 20 VON [V] 0 20 40 60 80 VbIN [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ.
PAGE 14
Data Sheet BTS555 Timing diagrams Figure 1: Switching a resistive load, change of load current in on-condition: Figure 2b: Switching an inductive load: IIN IIN VOUT 90% dV/dtoff VOUT t on dV/dton t off 10% IL tslc(IS) Load 1 IIS t slc(IS) IL Load 2 IIS tson(IS) t t t soff(IS) The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3: Short circuit: shut down by short circuit detection, reset by IIN = 0.
PAGE 15
Data Sheet BTS555 Figure 4: Overtemperature, Reset if (IIN=low) and (Tj
PAGE 16
Data Sheet BTS555 Package Dimensions All dimensions in mm PG-TO218-5-146 BTS555 E3146 Green Product 15 ±0.2 To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads). 14.8 10.8 ±0.2 4.9 2 +0.1 -0.02 B 0.06 A 14 ±0.5 1.7 1) Revision History 12.5 ±0.3 20.3 ±0.2 4 4 +0.