Datasheet

Data Sheet 10 V1.1, 2007-05-29
Smart High-Side Power Switch
BTS5215L
GND disconnect with GND pull up

352)(7
9
,1
67
287
*1'
EE
9
EE
9
*1'
9
,1
9
67
Any kind of load. If V
GND
> V
IN
- V
IN(T+)
device stays off
Due to V
GND
> 0, no V
ST
= low signal available.
V
bb
disconnect with energized inductive
load
352)(7
9
,1
67
287
*1'
EE
9
EE
KLJK
For inductive load currents up to the limits defined by Z
L
(max. ratings and diagram on page 10) each switch is
protected against loss of V
bb
.
Consider at your PCB layout that in the case of Vbb dis-
connection with energized inductive load all the load current
flows through the GND connection.
I
n
d
uct
i
ve
l
oa
d
sw
i
tc
h
-o
ff
energy
dissipation
352)(7
9
,1
67
287
*1'
EE
(
(
(
(
$6
EE
/
5
(
/RD
5
/
/
^
/
=
Energy stored in load inductance:
E
L
=
1
/
2
·L·I
2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
E
AS
= E
bb
+ E
L
- E
R
= V
ON(CL)
·i
L
(t) dt,
with an approximate solution for R
L
> 0 Ω:
E
AS
=
I
L
·L
2
·R
L
(V
bb
+|V
OUT(CL)
|) OQ(1+
I
L
·R
L
|V
OUT(CL)
|
)
Maximum allowable load inductance for
a single switch off (one channel)
4)
/ I,
/
T
j,start
= 150°C, V
bb
= 12 V, R
L
=0Ω
Z
L
[mH]





I
L
[A]