Datasheet

Data Sheet BTS50085-1TMB
Infineon Technologies AG Page 4 2008-Jan-24
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, V
bb
= 24 V unless otherwise specified
min typ max
Inverse Load Current Operation
On-state resistance (Pins 1,2,6,7 to pin 4)
V
bIN
= 12 V, I
L
= - 20 A T
j
= 25 °C:
see diagram on page 10 T
j
= 150 °C:
R
ON(inv)
-- 7.2
14.6
9
17
mΩ
Nominal inverse load current (Pins 1,2,6,7 to Tab)
V
ON
= -0.5 V, T
c
= 85 °C
I
L(inv)
50 60 -- A
Drain-source diode voltage (V
out
> V
bb
)
I
L
=
-
20 A,
I
IN
= 0,
Tj = +150°C
-V
ON
-- 0.6 0.7 mV
Operating Parameters
Operating voltage (V
IN
= 0)
12
)
V
bb(on)
5.0 -- 58 V
Under voltage shutdown
13
)
14
)
V
bIN(u)
1.5 3.0 4.5 V
Under voltage start of charge pump
see diagram page 15 V
bIN(ucp)
3.0 4.5 6.0 V
Over voltage protection
15
)
T
j
=-40°C:
I
bb
= 15 mA T
j
= 25...+150°C:
V
bIN(Z)
68
70
--
72
--
--
V
Standby current T
j
=-40...+25°C:
I
IN
= 0, V
bb
=35V T
j
= 150°C:
I
bb(off)
--
--
15
25
25
50
µA
12
)
If the device is turned on before a V
bb
-decrease, the operating voltage range is extended down to V
bIN(u)
.
For the voltage range 0..58 V the device provides embedded protection functions against overtemperature
and short circuit.
13
)
not subject to production test, specified by design
14
)
V
bIN
= V
bb
- V
IN
see diagram on page 15. When V
bIN
increases from less than V
bIN(u)
up to V
bIN(ucp)
= 5 V
(typ.) the charge pump is not active and V
OUT
≈V
bb
- 3 V.
15
)
See also V
ON(CL)
in circuit diagram on page 9.