PROFET® Data Sheet BTS50085-1TMB Smart Highside High Current Power Switch Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio Reversave • Reverse battery protection by self turn on of power MOSFET Features • Overload protection • Current limitation • Short circuit protection • Over temperature protection • Over voltage protection (including load dump) • Clamp of negative voltage at output • Fa
Data Sheet BTS50085-1TMB Pin Symbol Function 1 OUT O Output to the load. The pins 1,2,6 and 7 must be shorted with each other 3 especially in high current applications! ) 2 OUT O Output to the load. The pins 1,2,6 and 7 must be shorted with each other especially in high current applications! 3) 3 IN I Input, activates the power switch in case of short to ground 4 Vbb + Positive power supply voltage, the tab is electrically connected to this pin.
Data Sheet BTS50085-1TMB Thermal Characteristics Parameter and Conditions Symbol 7 chip - case: RthJC ) junction - ambient (free air): RthJA SMD version, device on PCB 8): Thermal resistance min ---- Values typ max -- 0.75 60 -33 -- Unit K/W Electrical Characteristics Parameter and Conditions Symbol at Tj = -40 ...
Data Sheet BTS50085-1TMB Parameter and Conditions Symbol at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified Inverse Load Current Operation On-state resistance (Pins 1,2,6,7 to pin 4) VbIN = 12 V, IL = - 20 A Tj = 25 °C: RON(inv) see diagram on page 10 Tj = 150 °C: Nominal inverse load current (Pins 1,2,6,7 to Tab) IL(inv) VON = -0.5 V, Tc = 85 °C Drain-source diode voltage (Vout > Vbb) -VON IL = - 20 A, IIN = 0, Tj = +150°C Values min typ max -- Unit 9 17 -- mΩ 50 7.2 14.6 60 -- 0.
Data Sheet BTS50085-1TMB Parameter and Conditions Symbol at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified Protection Functions16) Short circuit current limit (Tab to pins 1,2,6,7) VON = 24 V, time until shutdown max.
Data Sheet BTS50085-1TMB Parameter and Conditions Symbol at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified Diagnostic Characteristics Current sense ratio, static on-condition, kILIS = IL : IIS,19 VON < 1.5 V ), VIS 4.0 V see diagram on page 12 IL = 80 A,Tj =-40°C: kILIS Tj =25°C: Tj =150°C: IL = 20 A,Tj =-40°C: Tj =25°C: Tj =150°C: IL = 10 A,Tj =-40°C: Tj =25°C: Tj =150°C: IL = 4 A,Tj =-40°C: Tj =25°C: Tj =150°C: IIN = 0, IIS=0 (e.g.
Data Sheet BTS50085-1TMB Truth Table Input current Output Current Sense level level L H L H IIS 0 nominal H H IIS, lim H H 0 L H L H L H L H L L L L L H H 23 Z ) H L 0 0 0 0 0 22 VON
Data Sheet BTS50085-1TMB Input circuit (ESD protection) Current sense status output V bb ZD V Vbb R bb R bb V Z,IS ZD Z,IN V bIN IS IN IIS I R IN V IN When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 74 V (typ). Short circuit detection Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 µs). VIS IS VZ,IS = 74 V (typ.
Data Sheet BTS50085-1TMB Over voltage protection of logic part + Vbb V R IN IN Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 70 V or VZb < 42 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. R bb Z,IN V Z,IS Vbb disconnect with energized inductive load Logic V OUT Version a: PROFET IS R IS V bb V V Z,VIS RV IN bb PROFET OUT Signal GND Rbb = 120 Ω typ., VZ,IN = VZ,IS = 74 V typ.
Data Sheet BTS50085-1TMB Inverse load current operation Maximum allowable load inductance for a single switch off L = f (IL ); Tj,start = 150°C, Vbb = 40 V, RL = 0 Ω Vbb V bb - IL IN + PROFET OUT 10000 V OUT + IS - IIS V IN V IS - R IS 1000 The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g.
Data Sheet BTS50085-1TMB Options Overview Type BTS50085-1TMB Over temperature protection with hysteresis Tj >150 °C, latch function24) Tj >150 °C, with auto-restart on cooling Short circuit to GND protection X switches off when VON>6 V typ. (when first turned on after approx. 180 µs) X Over voltage shutdown - X Output negative voltage transient limit to Vbb - VON(CL) to VOUT = -15 V typ X 25 X ) ) Latch except when V -V bb OUT < VON(SC) after shutdown.
Data Sheet BTS50085-1TMB Characteristics Current sense ratio: KILIS = f(IL), Tj= 25°C Current sense versus load current: IIS = f(IL), TJ= -40 ...
Data Sheet BTS50085-1TMB Typ. current limitation characteristic IL = f (VON, Tj ) Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA] IL [A] 400 1.6 350 1.4 300 1.2 VON>V ON(SC) only for t < t d(SC) (otherwise immediate shutdown) 250 1.0 200 0.8 150 0.6 0.4 100 T j = -40°C 150°C 25°C 0.2 50 0 0 0 VON(FB)5(Fold Back) 10 15 20 VON [V] 0 20 40 60 80 VbIN [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ.
Data Sheet BTS50085-1TMB Timing diagrams Figure 2c: Switching an inductive load: Figure 1a: Switching a resistive load, change of load current in on-condition: IIN IIN VOUT 90% dV/dtoff t on dV/dton t off 10% IL tslc(IS) Load 1 IIS VOUT IL t slc(IS) Load 2 IIS t tson(IS) t t soff(IS) The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3d: Short circuit: shut down by short circuit detection, reset by IIN = 0.
Data Sheet BTS50085-1TMB Figure 4e: Overtemperature Reset if Tj
Data Sheet BTS50085-1TMB Package and Ordering Code All dimensions in mm PG-TO220-7-11 Sales Code BTS50085-1TMB 10 ±0.2 A 9.9 ±0.2 1.27 ±0.1 C 7 x 0.6 ±0.1 1) 1.6 ±0.3 0.5 ±0.1 2.4 0...0.15 6 x 1.27 3.7 ±0.3 10.2 ±0.3 8.6 ±0.3 0.05 9.25 ±0.2 0...0.3 2.8 ±0.2 3.7 -0.15 1) 12.95 15.65 ±0.3 17 ±0.3 8.5 4.4 1) 3.9 ±0.4 0.25 M A C 8.4 ±0.4 Typical Metal surface min. X = 7.25, Y = 12.3 All metal surfaces tin plated, except area of cut.
Data Sheet BTS50085-1TMB Revision History Version Date Changes Rev. 1.0 2008-01-24 Initial version of data sheet.
Edition 2008-Jan-24 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2008. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).