Datasheet

Datasheet 7 Rev. 1.0, 2008-01-23
Smart High-Side Power Switch
BTS50080-1TMB
General Product Characteristics
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
1)
T
j
= 25°C (unless otherwise specified)
1) Not subject to production test, specified by design.
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
Supply Voltages
4.1.1 Supply voltage
V
bb
-16 38 V
4.1.2 Supply voltage for full short circuit
protection (single pulse)
2)
2) Short circuit is defined as a combination of remaining resistances and inductances. See Figure 13.
V
bb(SC)
030V
4.1.3 Supply Voltage for Load Dump
protection
3)
3) Load Dump is specified in ISO 7637, R
I
is the internal resistance of the Load Dump pulse generator.
V
bb(LD)
–45VR
I
= 2 ,
R
L
= 1
Logic Pins
4.1.4 Voltage at input pin
V
bIN
-16 63 V
4.1.5 Current through input pin
I
IN
-120 15 mA
4.1.6 Voltage at current sense pin
V
bIS
-16 63 V
4.1.7 Current through sense pin
I
IS
-120 15 mA
4.1.8 Input voltage slew rate
4)
4) Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input
path. A series resistor
R
IN
in the input path is also required for reverse operation at V
bb
-16V. See also Figure 14.
dV
bIN
/dt -20 20 V/µs
Power Stages
4.1.9 Load current
5)
5) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range.
Protection features are not designed for continuous repetitive operation.
I
L
- I
Lx(SC)
A–
4.1.10 Maximum energy dissipation per
channel (single pulse)
E
AS
-0.4JV
bb
= 12 V,
I
L(0)
= 20 A,
T
j(0)
= 150°C
Temperatures
4.1.11 Junction temperature
T
j
-40 150 °C
4.1.12 Storage temperature
T
stg
-55 150 °C
ESD Susceptibility
4.1.13 ESD susceptibility HBM
V
ESD
-3 3 kV according to
EIA/JESD 22-A
114B