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BTS50080-1TEA

Smart High-Side Power Switch

PROFET™

One Channel

Datasheet, Rev. 1.0, Aug. 2008

Automotive Power

Summary of content (27 pages)

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Datasheet, Rev. 1.0, Aug.
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Smart High-Side Power Switch BTS50080-1TEA Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 2.2 Block Diagram and Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Smart High-Side Power Switch PROFET™ One Channel 1 BTS50080-1TEA Overview Features • • • • • • • • • • Part of scalable product family Load current sense Reversave™ Very low standby current Current controlled input pin Improved electromagnetic compatibility (EMC) Fast demagnetization of inductive loads Stable behavior at under-voltage Green Product (RoHS compliant) AEC Qualified PG-TO252-5-11 Vbb(on) Minimum overvoltage protection VON(CL) Maximum on-state resistance at 150°C RDS(ON) Nominal load curr
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Smart High-Side Power Switch BTS50080-1TEA Overview Protective Functions • • • • • • • • • • Reversave™, channel switches on in case of reverse polarity Reverse battery protection without external components Short circuit protection with latch Overload protection Multi-step current limitation Thermal shutdown with restart Overvoltage protection (including load dump) Loss of ground protection Loss of Vbb protection (with external diode for charged inductive loads) Electrostatic discharge protection (ESD) D
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Smart High-Side Power Switch BTS50080-1TEA Block Diagram and Terms 2 Block Diagram and Terms 2.1 Block Diagram logic IC base chip Rbb Vbb voltage sensor over temperature IIN IS VIN gate control & charge pump driver logic current limitation OUT load current sense I IS IL forward voltage drop detection LOAD VIS ESD IN T clamp for inductive load RIS Overview .emf Figure 1 Block Diagram 2.2 Terms Following figure shows all terms used in this data sheet.
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Smart High-Side Power Switch BTS50080-1TEA Pin Configuration 3 Pin Configuration 3.1 Pin Assignment BTS50080-1TEA TAB IS OUT 4 5 V bb IN 2 3 OUT 1 Vbb TO252-5 .emf Figure 3 Pin Configuration 3.2 Pin Definitions and Functions Pin Symbol Function 1 OUT Output; output to the load; pin 1 and 5 must be externally shorted.1) 2 IN Input; activates the power switch if shorted to ground. 3 Vbb Supply Voltage; positive power supply voltage; tab and pin 3 are internally shorted.
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Smart High-Side Power Switch BTS50080-1TEA General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = 25°C (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Unit Conditions Max. Supply Voltages 4.1.1 4.1.2 Vbb Supply voltage for short circuit protection Vbb(SC) Supply voltage -16 38 V – 0 30 V – – 45 V RI = 2 Ω, RL = 1.
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Smart High-Side Power Switch BTS50080-1TEA General Product Characteristics Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. 4.2 Pos. 4.2.1 4.2.
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Smart High-Side Power Switch BTS50080-1TEA Power Stages 5 Power Stages The power stage is built by a N-channel vertical power MOSFET (DMOS) with charge pump. 5.1 Input Circuit Figure 4 shows the input circuit of the BTS50080-1TEA. The current source to Vbb ensures that the device switches off in case of open input pin. The zener diode protects the input circuit against ESD pulses. VbIN Rbb IIN IN Vbb VZ,IN I VIN Input.
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Smart High-Side Power Switch BTS50080-1TEA Power Stages ȍ ȍ Figure 6 Typical On-State Resistance Vbb = 12 V Tj = 25°C ≥ Figure 7 Typical Output Voltage Drop Limitation 5.
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Smart High-Side Power Switch BTS50080-1TEA Power Stages V bb VON VBB IL OUT V OUT L, RL OutputClamp .emf Figure 8 Output Clamp To prevent destruction of the device, there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level (VON(CL)). See Figure 8 and Figure 9 for details. The maximum allowed load inductance is limited. V OUT ON OFF Vbb t VON(CL) V OUT(CL) IL t Figure 9 Switching an Inductance 5.3.1 Maximum Load Inductance InductiveLoad.
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Smart High-Side Power Switch BTS50080-1TEA Power Stages Vbb = 12 V Tj(o) ≤ 150°C L 10 mH 1 0,1 0,01 1 Figure 10 Datasheet 10 A 100 IL Maximum load inductance for single pulse, Tj(0) ≤ 150°C. 12 Rev. 1.
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Smart High-Side Power Switch BTS50080-1TEA Power Stages 5.4 Electrical Characteristics Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions Max. General 5.4.1 Operating voltage 1) 5.4.2 Undervoltage shutdown 2) 5.4.3 Undervoltage restart of charge pump 5.4.4 Operating current 5.4.
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Smart High-Side Power Switch BTS50080-1TEA Power Stages Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions Max. 5.4.16 Slew rate On 25% to 50% VOUT (dV / dt)ON - 0.3 0.5 V/µs RL = 2.2 Ω 5.4.17 Slew rate Off 50% to 25% VOUT -(dV/dt)OFF - 0.3 0.6 V/µs RL = 2.2 Ω 1) Please mind the limitations of the embedded protection functions. See Chapter 4.
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Smart High-Side Power Switch BTS50080-1TEA Protection Functions 6 Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed for continuous nor repetitive operation. 6.
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Smart High-Side Power Switch BTS50080-1TEA Protection Functions VON(SC) detection Overtemperature detection IIN IIN t VON t IL V ONx > VON(SC) t ILx(SC) IL t Τj tm td(SC1) thermal hysteresis t t Over_Temp.emf V_ON_detect .emf Figure 12 Overload Behavior 6.2 Short circuit impedance The capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance.
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Smart High-Side Power Switch BTS50080-1TEA Protection Functions 6.3 Reverse Polarity Protection - Reversave™ The device can not block a current flow in reverse polarity condition. In order to minimize power dissipation, the device offers Reversave™ functionality. In reverse polarity condition the channel will be switched on provided a sufficient gate to source voltage is generated VGS ≈ VRbb. Please refer to Figure 14 for details.
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Smart High-Side Power Switch BTS50080-1TEA Protection Functions 6.4 Overvoltage Protection Beside the output clamp for the power stage as described in Section 5.3 there is a clamp mechanism implemented for all logic pins. See Figure 15 for details. Vbb Logic VZ,IS VZ,IN Rbb IN IS Figure 15 Overvoltage Protection 6.5 Loss of Ground Protection OUT OverVoltage .emf In case of complete loss of the device ground connections the BTS50080-1TEA securely changes to or remains in off state. 6.
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Smart High-Side Power Switch BTS50080-1TEA Protection Functions 6.7 Electrical Characteristics Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Min. Typ. Unit Conditions A VON = 1.5 V, (Tab to pin 1 and 5) A VON = 12 V, tm = 170 µs, Max.
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Smart High-Side Power Switch BTS50080-1TEA Protection Functions 2) Short circuit current limit for max. duration of td(SC1), prior to shutdown, see also Figure 12. 3) min. value valid only if input “off-signal” time exceeds 30 µs Datasheet 20 Rev. 1.
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Smart High-Side Power Switch BTS50080-1TEA Diagnosis 7 Diagnosis For diagnosis purpose, the BTS50080-1TEA provides an enhanced sense signal at the pin IS. The pin IS provides during normal operation a sense current, which is proportional to the load current as long as VbIS > 5 V. The ratio of the output current is defined as kILIS = IL/IIS. During switch-on no current is provided, until the forward voltage drops below VON < 1 V typ. The output sense current is limited to IIS(lim).
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Smart High-Side Power Switch BTS50080-1TEA Diagnosis 25000 k ILIS 20000 15000 max. 10000 typ. min. 5000 0 0 Figure 18 5 10 15 20 25 A 30 IL Current sense ratio kILIS1) Details about timings between the diagnosis signal IIS, the forward voltage drop VON and the load current IL in ONstate can be found in Figure 19.
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Smart High-Side Power Switch BTS50080-1TEA Diagnosis 7.1 Electrical Characteristics Vbb = 12 V, Tj = -40 ... 150 °C (unless otherwise specified) Typical values are given at Vbb = 12 V, Tj = 25 °C Pos. Parameter Symbol Limit Values Min. Typ. - 10 - 8.3 7.5 7.1 5 9.7 9.7 9.7 12 11 11.4 13.4 21 Unit Conditions k VIN = 0 V, IIS < IIS(lim) - - VON < 1 V, typ. VON > 1 V, typ. Max. Load Current Sense 7.1.1 Current sense ratio, static oncondition kILIS IL=30A IL=7.5A IL=2.5A IL=0.
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Smart High-Side Power Switch BTS50080-1TEA Package Outlines 8 Package Outlines Figure 20 PG-TO252-5-11 Green Product To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
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Smart High-Side Power Switch BTS50080-1TEA Revision History 9 Version Data sheet Rev. 1.0 Datasheet Revision History Date Changes 2008-08-22 Initial version of data sheet. 25 Rev. 1.
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Edition 2008-08-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
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