Datasheet

Data Sheet BTS50055-1TMB
Infineon Technologies AG Page 6 2010-April-27
Parameter and Conditions Symbol Values Unit
at Tj = -40 ... +150 °C, V
bb
= 12 V unless otherwise specified
min typ max
Diagnostic Characteristics
Current sense ratio, I
L
= 90 A,T
j
=-40°C:
static on-condition, T
j
=25°C:
k
ILIS
= I
L
: I
IS,
T
j
=150°C:
V
ON
< 1.5 V
19
)
, I
L
= 20 A,T
j
=-40°C:
V
IS
<V
OUT
- 5V, T
j
=25°C:
V
bIN
> 4.0 V T
j
=150°C:
see diagram on page 12 I
L
= 10 A,T
j
=-40°C:
T
j
=25°C:
T
j
=150°C:
I
L
= 4 A,T
j
=-40°C:
T
j
=25°C:
T
j
=150°C:
k
ILIS
12 500
12 500
11 500
12 500
12 000
11 500
12 500
11 500
11 500
11 000
11 000
11 200
14 200
13 700
13 000
14 500
14 000
13 400
15 000
14 300
13 500
18 000
15 400
14 000
16 000
16 000
14 500
17 500
16 500
15 000
19 000
17 500
15 500
28 500
22 000
19 000
I
IS
=0 by I
IN
=0 (e.g. during deenergizing of inductive loads):
Sense current saturation I
IS,lim
6.5 -- -- mA
Current sense leakage current I
IN
= 0:
V
IN
= 0, I
L
≤ 0:
I
IS(LL)
I
IS(LH)
--
--
--
2
0.5
65
µA
Current sense over voltage protection T
j
=-40°C:
I
bb
= 15 mA T
j
= 25...+150°C:
V
Z,IS
60
62
--
66
--
--
V
Current sense settling time
20
)
t
s(IS)
-- -- 500
µs
Input
Input and operating current (see diagram page 13)
IN grounded (V
IN
= 0)
I
IN(on)
-- 0.8 1.5 mA
Input current for turn-off
21
)
I
IN(off)
-- -- 80 µA
19
)
If V
ON
is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see
I
IS,lim
.
20
)
not subject to production test, specified by design
21
)
We recommend the resistance between IN and GND to be less than 0.5
kΩ for turn-on and more than
500
kΩ for turn-off. Consider that when the device is switched off (I
IN
= 0) the voltage between IN and GND
reaches almost V
bb
.