Datasheet

PROFET
®
BTS 432 E2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, V
bb
= 12 V unless otherwise specified
min typ max
Data Sheet 4 2010-Jan-26
Protection Functions
8)
Initial peak short circuit current limit (pin 3 to 5)
9)
,
( max 400 µs if V
ON
> V
ON(SC)
)
I
L(SCp)
Tj
=-40°C:
Tj
=25°C:
Tj
=+150°C:
--
--
24
--
44
--
74
--
--
A
Repetitive short circuit current limit I
L(SCr)
T
j
= T
jt
(see timing diagrams, page 10) 22 35 -- A
Short circuit shutdown delay after input pos. slope
V
ON
> V
ON(SC)
, T
j
=-40..+150°C:
min value valid only, if input "low" time exceeds 30 µs
t
d(SC)
80 -- 400 µs
Output clamp (inductive load switch off)
at V
OUT
= V
bb
– V
ON(CL)
,
I
L
= 30 mA V
ON(CL)
-- 58 -- V
Short circuit shutdown detection voltage
(pin 3 to 5) V
ON(SC)
-- 8.3 -- V
Thermal overload trip temperature T
jt
150 -- -- °C
Thermal hysteresis ∆ T
jt
-- 10 -- K
Inductive load switch-off energy dissipation
10)
,
T
j Start
= 150 °C, single pulse V
bb
= 12 V:
V
bb
= 24 V:
E
AS
E
Load12
E
Load24
-- -- 1.7
1.3
1.0
J
Reverse battery (pin 3 to 1)
11)
-V
bb
-- -- 32 V
Integrated resistor in V
bb
line R
bb
-- 120 -- Ω
Diagnostic Characteristics
Open load detection current T
j
=-40 °C:
(on-condition) T
j
=25..150°C:
I
L (OL)
2
2
--
--
900
750
mA
8)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9)
Short circuit current limit for max. duration of 400 µs, prior to shutdown (see t
d(SC)
page 4)
10)
While demagnetizing load inductance, dissipated energy in PROFET is E
AS
=
∫
V
ON(CL)
* i
L
(t) dt, approx.
E
AS
=
1
/
2
* L * I
2
L
* (
V
ON(CL)
V
ON(CL)
- V
bb
), see diagram page 8.
11)
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
GND
of ≈ 0.3 A at V
bb
= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse I
GND
can be reduced by an additional
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).