Datasheet

Datasheet 4 Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Electrical Characteristics
Parameter
Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150, I
D
= 10 mA
V
DS(AZ)
42 - 55 V
Off-state drain current Tj = -40 ... +150°C
V
DS
= 32 V, V
IN
= 0 V
I
DSS
- 1.5 10 µA
Input threshold voltage
I
D
= 0.3 mA, T
j
= 25 °C
I
D
= 0.3 mA, T
j
= 150 °C
V
IN(th)
1.3
0.8
1.7
-
2.2
-
V
On state input current I
IN
(
on
)
- 10 30 µA
On-state resistance
V
IN
= 5 V, I
D
= 1.4 A, T
j
= 25 °C
V
IN
= 5 V, I
D
= 1.4 A, T
j
= 150 °C
R
DS(on)
-
-
190
350
240
480
mW
On-state resistance
V
IN
= 10 V, I
D
= 1.4 A, T
j
= 25 °C
V
IN
= 10 V, I
D
= 1.4 A, T
j
= 150 °C
R
DS(on)
-
-
150
280
200
400
Nominal load current per channel
5)
V
DS
= 0.5 V, T
j
< 150°C, V
IN
= 10 V, T
A
= 85 °C,
one channel on
both channels on
I
D(Nom)
1.3
1
1.65
1.3
-
-
A
Current limit (active if V
DS
>2.5 V)
2)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 200 µs
I
D(lim)
5 7.5 10
1
not subject to production test, specified by design
2
Device switched on into existing short circuit (see diagram Determination of I
D(lim)
). If the device is in on con
d
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5
not subject to production test, calculated by R
THJA
and R
ds(on)