Datasheet

Datasheet 3 Rev. 1.3, 2007-11-06
Smart Low Side Power Switch
HITFET BTS 3410G
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Drain source voltage V
DS
42 V
Drain source voltage for short circuit protection
1)
T
j
= -40...150 °C
V
DS(SC)
18
Continuous input current
1)
-0.2V £ V
IN
£ 10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
no limit
| I
IN
| £ 2
mA
Operating temperature T
j
-40 ...+150
°C
Storage temperature T
st
g
-55 ... +150
Power dissipation
2)5)
T
A
= 85 °C
P
tot
0.8 W
Unclamped single pulse inductive energy
1)
each channel
E
AS
150
mJ
Load dump protection V
LoadDump
1)3)
= V
A
+ V
S
V
IN
= 0 and 10 V, t
d
= 400 ms, R
I
= 2 W,
R
L
= 9 W, V
A
= 13.5 V
V
LD
50 V
Electrostatic discharge voltage
1)
(Human Body Model)
according to Jedec norm
EIA/JESD22-A114-B, Section 4
V
ESD
2 kV
Thermal resistance
junction - ambient: per channel
@ 6 cm
2
cooling area
2)
one channel on
both channels on
R
thJA
100
160
K/W
1
not subject to production test, specified by design
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
3
V
Loaddump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5
not subject to production test, calculated by R
THJA
and R
ds(on)