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Datasheet 1 Rev. 1.3, 2007-11-06

Smart Low Side Power Switch

HITFET BTS 3410G

Product Summary

Drain source voltage

42 V

On-state resistance R

(

)

200 mW

Nominal load current I

(

Nom

)

1.3 A

Clamping energy E

150 mJ

Application

· All kinds of resistive, inductive and capacitive loads in switching

or linear applications

· µC compatible power switch for 12 V DC applications

· Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS

technology. Fully protected by embedded

protection functions.

Logic

Channel 1

Vbb

In1

Source1

Drain1

HITFET

Pin 2

Pin 7and 8

Logic

Channel 2

In2

Source2

Pin 4

Drain2

Pin 1

Pin 5and 6

Pin 3

Complete product spectrum and additional information http://www.infineon.com/hitfet

Features

· Logic Level Input

· Input Protection (ESD)

· Thermal shutdown with auto restart

• Green product (RoHS compliant)

· Overload protection

· Short circuit protection

· Overvoltage protection

· Current limitation

· Analog driving possible

Summary of content (12 pages)

PAGE 1
Smart Low Side Power Switch HITFET BTS 3410G Features Product Summary · Logic Level Input Drain source voltage VDS · Input Protection (ESD) On-state resistance RDS(on) 200 mW · Thermal shutdown with auto restart Nominal load current ID(Nom) 1.
PAGE 2
Smart Low Side Power Switch HITFET BTS 3410G Pin Description Pin Configuration (Top view) Pin Symbol Function 1 S1 Source Channel 1 2 IN1 Input Channel 1 3 S2 4 S1 1· 8 D1 Source Channel 2 IN1 2 7 D1 IN2 Input Channel 2 S2 3 6 D2 5 D2 Drain Channel 2 IN2 4 5 D2 6 D2 Drain Channel 2 7 D1 Drain Channel 1 8 D1 Drain Channel 1 HITFET Drain1 â Current Limitation In1 PG- DSO-8-25 OvervoltageProtection Pin 7, 8 Vbb Gate-Driving Unit Pin 2 M ESD Overload Pro
PAGE 3
Smart Low Side Power Switch HITFET BTS 3410G Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Value Drain source voltage VDS 42 Drain source voltage for short circuit protection 1) VDS(SC) 18 Unit V Tj = -40...150 °C IIN Continuous input current1) mA -0.2V £ VIN £ 10V no limit VIN < -0.2V or VIN > 10V | IIN | £ 2 Operating temperature Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation2)5) Ptot 0.
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Smart Low Side Power Switch HITFET BTS 3410G Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 10 µA Characteristics VDS(AZ) Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C IDSS VDS = 32 V, VIN = 0 V VIN(th) Input threshold voltage V ID = 0.3 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 0.3 mA, Tj = 150 °C 0.
PAGE 5
Smart Low Side Power Switch HITFET BTS 3410G Electrical Characteristics Symbol Parameter at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. ton - 45 100 RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: toff - 60 100 RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: -dVDS/dt on - 0.4 1.5 RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: dVDS/dtoff - 0.6 1.
PAGE 6
Smart Low Side Power Switch HITFET BTS 3410G Block diagram Inductive and overvoltage output clamp Terms RL V I IN D Z D IN ID VDS Vbb HITFET S S VIN HITFET Short circuit behaviour Input circuit (ESD protection) Gate Drive Input VIN Source/ Ground IIN IDS Tj Datasheet 6 Rev. 1.
PAGE 7
Smart Low Side Power Switch HITFET BTS 3410G 1 Overall maximum allowable power 2 On-state resistance dissipation; P tot = f(TS) resp. P tot = f(TA) @ R thJA=80 K/W R ON = f(Tj ); ID=1.4A; V IN=10V 3 500 mW W max. RDS(on) 400 T S Ptot 2 T 350 300 typ. A 1.5 250 200 1 150 100 0.5 50 0 -50 -25 0 25 50 75 100 °C Tj 0 -50 150 -25 0 25 50 75 100 125 °C Tj 3 On-state resistance 4 Typ. input threshold voltage R ON = f(T j); ID= 1.4A; V IN=5V VIN(th) = f(Tj); ID = 0.
PAGE 8
Smart Low Side Power Switch HITFET BTS 3410G 5 Typ. transfer characteristics 6 Typ. short circuit current I D=f(V IN); VDS=12V; T Jstart=25°C ID(lim) = f(Tj); VDS=12V Parameter: V IN 10 8 A A 8 7 ID(lim) ID 6 5 6 Vin=10V 5 4 5V 4 3 3 2 2 1 0 0 1 1 2 3 4 5 6 7 8 V 0 -50 10 -25 0 25 50 75 100 125 °C VIN 7 Typ. output characteristics 8 Typ. off-state drain current I D=f(V DS); T Jstart=25°C Parameter: V IN IDSS = f(T j) 10 Vin=10V A 175 Tj 11 µA 7V max.
PAGE 9
Smart Low Side Power Switch HITFET BTS 3410G 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb=12 V, no heatsink ZthJA=f(tp) @ 6 cm2 cooling area Parameter: Tjstart Parameter: D=tp/T ; one channel on 10 2 12 K/W A -40°C 25°C ZthJA ID(lim) 10 1 8 85°C 10 0 6 150°C 4 10 -1 2 0 0 0.5 1 1.5 2 2.5 3 ms D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0 10 -2 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 4 s 10 4 tP t 11 Determination of ID(lim) 12 Typ.
PAGE 10
Smart Low Side Power Switch HITFET BTS 3410G Package Outlines 1 Package Outlines 0.1 2) 0.41+0.1 -0.06 0.2 8 5 1 4 5 -0.2 1) M 0.19 +0.06 4 -0.2 C B 8 MAX. 1.27 1.75 MAX. 0.175 ±0.07 (1.45) 0.35 x 45˚ 1) 0.64 ±0.25 6 ±0.2 A B 8x 0.2 M C 8x A Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Lead width can be 0.61 max.
PAGE 11
Smart Low Side Power Switch HITFET BTS 3410G Revision History 2 Revision History Version Rev. 1.3 Date Changes 2007-11-06 updated package drawing of green package Rev. 1.2 2007-06-18 released automotive green version Package parameter (humidity and climatic) removed in Maximum ratings AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green package naming Green explanation added Rev. 1.
PAGE 12
Edition 2007-11-06 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).