Datasheet

Data Sheet 7 Rev. 1.1, 2011-09-01
Smart Low-Side Power Switch
BTS3405G
General Product CharacteristicsAbsolute Maximum Ratings
4 General Product Characteristics
4.1 Absolute Maximum Ratings
All parameters apply for both channels accordingly.
Absolute Maximum Ratings
1)
T
j
= -40 ⋅C to +150 ⋅C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified), all values valid for both channels
1) Not subject to production test, specified by design.
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Max.
Voltages
4.1.1 Drain voltage
V
D
–42V
2)
V
IN
= 0 V, I
D
= 10 mA
2) Active clamped.
4.1.2 Input Voltage V
IN
-0.2 10 V –
4.1.3 Input Current
I
IN
self limited mA -0.2 V < V
IN
< 10 V
4.1.4 -2 2 mA
V
IN
< -0.2 V
or
V
IN
> 10 V
4.1.5 Drain Current
I
D
–600mA
3)
T
j
= 25 °C
3) Internally limited.
Energies
4.1.6 Unclamped single pulse inductive energy
single pulse
E
AS
065mJI
D
= 350 mA;
V
bb
= 28 V;
T
J(start)
= 85 °C
4.1.7 Unclamped single pulse inductive energy
single pulse
–30mJ
I
D
= 250 mA;
V
bb
= 28 V;
T
J(start)
= 150 °C
4.1.8 Unclamped repetitive pulse inductive
energy 1×10
4
cycles
E
AR
018mJI
D
= 200 mA;
V
bb
= 13.5 V;
T
J(start)
= 105 °C
4.1.9 Unclamped repetitive pulse inductive
energy 1×10
6
cycles
–13mJ
I
D
= 170 mA;
V
bb
= 13.5 V;
T
J(start)
= 105 °C
4.1.10 Total Power Dissipation
P
tot
–0.78W
4)
T
a
= 85 °C
4) Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried
planes). PCB is mounted vertical without blown air.
Temperatures
4.1.11 Operating temperature
T
J
-40 +150 °C–
4.1.12 Storage temperature
T
stg
-55 +150 °C–
ESD Susceptibility
4.1.13 Electrostatic discharge voltage
5)
5) ESD susceptibility HBM according to EIA/JESD 22-A 114B, section 4.
V
ESD
-2 2 kV IN Pin
R = 1.5 k;
C = 100 pF;
T
J
= 25 °C