Data Sheet, Rev. 1.
Smart Low-Side Power Switch BTS3405G 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Smart Low-Side Power Switch HITFET 1 BTS3405G Overview Features • • • • • • • • • • Low input current Short circuit and Overload protection Current limitation Input protection (ESD) Thermal protection with auto restart Compatible to standard Power MOSFET Analog driving possible Two channel concept saves PCB footprint Green Product (RoHS compliant) AEC Qualified PG-DSO-8-25 Description The BTS3405G is a two channel low-side power switch in PG-DSO-8-25 package providing embedded protective functions.
Smart Low-Side Power Switch BTS3405G Overview Protective Functions • • • • Electrostatic discharge protection (ESD) Active clamp over voltage protection Thermal shutdown with auto restart Short circuit protection Fault Information • • Thermal shutdown Short to Battery and overload Applications • • • • Designed for driving Relays in Automotive Applications All types of resistive, inductive and capacitive loads Suitable for loads with peak currents Replaces discrete circuits Detailed Description The dev
Smart Low-Side Power Switch BTS3405G Block DiagramTerms 2 Block Diagram Drain 1 Gate Driving Unit IN 1 Overvoltage Protection Overtemperature Protection Short circuit detection ESD Protection Source 1 Drain2 Gate Driving Unit IN 2 Overvoltage Protection Overtemperature Protection Short circuit detection ESD Protection Source2 BlockDiagram_3405 Figure 1 Block Diagram 2.1 Terms Figure 2 shows all external terms used in this data sheet.
Smart Low-Side Power Switch BTS3405G Pin ConfigurationPin Assignment BTS3405G 3 Pin Configuration 3.1 Pin Assignment BTS3405G Source 1 1 8 Drain 1 IN1 2 7 Drain 1 Source 2 3 6 Drain 2 IN2 4 5 Drain 2 P-DSO-8.vsd Figure 3 Pin Configuration PG-DSO-8-25 3.
Smart Low-Side Power Switch BTS3405G General Product CharacteristicsAbsolute Maximum Ratings 4 General Product Characteristics 4.1 Absolute Maximum Ratings All parameters apply for both channels accordingly. Absolute Maximum Ratings 1) Tj = -40 ⋅C to +150 ⋅C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified), all values valid for both channels Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Max. – 42 V 2) -0.
Smart Low-Side Power Switch BTS3405G General Product CharacteristicsThermal Resistance 4.2 Pos. Thermal Resistance Parameter Symbol 4.2.1 Junction to Soldering Point 4.2.2 Junction to Ambient all channel ON RthJC RthJA Limit Values Unit Conditions Min. Typ. Max. – – 38 K/W 1) 2) – 80 – K/W 1) 2) 1) Not subject to production test, specified by design. 2) Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried planes).
Smart Low-Side Power Switch BTS3405G General Product CharacteristicsThermal Resistance 102 D = 0.5 101 D = 0.2 ZthJA [K/W] D = 0.1 D = 0.05 D = 0.02 1 D = 0.01 10-1 10-6 Single pulse 10-5 10-4 10-3 10-2 10-1 tp [s] Figure 5 1 101 102 103 pulse_BTS3405_25 .emf Typical Transient Thermal Impedance ZthJA with different Duty cycles ZthJA = f(tp) , D = tp/T, Ta = 25 °C Device mounted on PCB according EIA/JEDEC standard JESD51-7 (4-layer FR4, 76.2 mm × 114.3 mm with buried planes).
Smart Low-Side Power Switch BTS3405G Block Description and CharacteristicsInput and Power Stage 5 Block Description and Characteristics 5.1 Input and Power Stage 5.1.1 Input Circuit Figure 6 shows the input circuit of the BTS3405G. The zener Diode protects the input circuit against ESD pulses. The internal circuitry is supplied by the input PIN. During normal operation the Input is connected to the Gate of the power MOSFET.
Smart Low-Side Power Switch BTS3405G Block Description and CharacteristicsInput and Power Stage 5.1.2 Failure Feedback During failure condition the BTS3405G tries to sink a increased input current IINlim. 5.1.3 Output On-State Resistance The on-state resistance depends on the junction temperature TJ. Figure 9 shows this dependency for the typical on-state resistance RDS(on). 1,5 RDS(on) [ Ω ] 1,3 1,1 Vin = 5V 0,9 0,7 Vin = 10V 0,5 0,3 -50 -25 0 25 50 75 100 125 150 T [ °C ] rdson.
Smart Low-Side Power Switch BTS3405G Block Description and CharacteristicsInput and Power Stage 5.1.4 Power Dissipation The maximum allowed power dissipation in Figure 10 is calculated by RthJC and RthJA. RthJC=38 K/W 1,00 Ptot / W RthJA=80 K/W 0,10 0,01 -50 -25 0 25 50 75 100 125 150 T / °C Ptot_3405.emf Figure 10 Maximal Allowable Power Dissipation 5.1.
Smart Low-Side Power Switch BTS3405G Block Description and CharacteristicsInput and Power Stage 5.1.6 Characteristics Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. All voltages with respect to Source Pin unless otherwise stated.
Smart Low-Side Power Switch BTS3405G Block Description and CharacteristicsInput and Power Stage Electrical Characteristics: Input and Power Stage (cont’d) Tj = -40 ⋅C to +150 ⋅C , all voltages with respect to ground, positive current flowing into pin (unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Conditions Min. Typ. Max. Switching Vbb = 12 V, RL = 82 Ω – 16 38 μs 5.1.12 Turn-off time ton toff – 15 45 μs 5.1.13 Slew rate on dVds/dton – 2.5 9.
Smart Low-Side Power Switch BTS3405G Protection FunctionsThermal Protection 6 Protection Functions The device provides embedded protection functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operation. 6.1 Thermal Protection The device is protected against over temperature due to overload and / or bad cooling conditions.
Smart Low-Side Power Switch BTS3405G Protection FunctionsOvervoltage Protection Turn off due to over temperature or short circuit IN 5V 0 t ID t VD V C lamp V bb t InductiveLoad.emf Figure 14 Switching an Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS3405G.
Smart Low-Side Power Switch BTS3405G Protection FunctionsShort Circuit Protection 6.3 Short Circuit Protection The condition short circuit is an overload condition of the device. If the current reaches the value of Ilim the device starts to limit the current. In the condition of current limitation the device heats up. If the thermal shutdown temperature is reached the device turns off. Figure 15 shows this behavior. During the current limitation the input current is above IINnom.
Smart Low-Side Power Switch BTS3405G Protection FunctionsCharacteristics 6.4 Characteristics Note: Characteristics show the deviation of parameter at given input voltage and junction temperature. Typical values show the typical parameters expected from manufacturing. Electrical Characteristics: Protection Functions Tj = -40 ⋅C to +150 ⋅C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified), all values valid for both channels Pos.
Smart Low-Side Power Switch BTS3405G Package Outlines BTS3405G 7 Package Outlines BTS3405G 0.1 2) 0.41+0.1 -0.06 0.2 8 5 1 4 5 -0.2 1) M B 0.19 +0.06 C 8 MAX. 1.27 4 -0.21) 1.75 MAX. 0.175 ±0.07 (1.45) 0.35 x 45˚ 0.64 ±0.25 6 ±0.2 A B 8x 0.2 M C 8x A Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Lead width can be 0.61 max.
Smart Low-Side Power Switch BTS3405G Revision History 8 Version Revision History Date Changes Rev. 1.1 2011-09-01 fixed a typo in EAR test conditions in chapter Max ratings updated Feature list and rephrased Detailed Description fixed a spelling error in 5.1.3 regarding “dependency” Rev. 1.0 2008-09-25 released data sheet Data Sheet 20 Rev. 1.
Edition 2011-09-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.