Datasheet

PG-TO-252-5-13
Type Package
BTS3160D PG-TO-252-5-13
Datasheet 3 Rev. 1.1, 2008-02-28
Smart Low Side Power Switch
HITFET - BTS3160D
BTS3160D
1Overview
The BTS3160D is a one channel low-side power switch in
PG-TO-252-5-13 package providing embedded protective functions.
The power transistor is realized by a N-channel vertical power
MOSFET.
The device is controlled by a chip in Smart Power Technology.
Features
• Logic level input compatible to 3.3 V or 5V micro controllers
• Supply by V
bb
line, down to 6 V
• Very low over all leakage current
• Providing digital fault information
• Electrostatic discharge protection (ESD)
• Green Product (RoHS compliant)
• AEC Qualified
Table 1 Basic Electrical Data
Drain voltage V
D
40 V
Supply voltage V
S
6.0 … 45 V
On-State resistance at 25°C R
DS(ON,max)
10 mΩ
Nominal load current I
Dnom
7.8 A
Maximum inrush current I
DSC
70 A
Leakage current MOSFET at V
bb
= 13.5 V, T
J
= 85 °C I
DSS
2 µA
Supply current in off mode at V
bb
= 13.5 V, T
J
= 85 °C I
SSS
4 µA
Clamping Energy E
AS
0.3 J