Datasheet

Datasheet 20 Rev. 1.1, 2008-02-28
Smart Low Side Power Switch
HITFET - BTS3160D
Power Stage
6.4 Electrical Characteristics Power Stage
V
S
= 6 V to 30 V, T
j
= -40 °C to +150 °C
All voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Power Supply
6.4.1
On-state resistance R
DS(on)
– 8 10 mΩ I
D
= 20 A;
V
IN
= high;
V
S
= 10 V;
T
J
= 25 °C
– 14 18 mΩ I
D
= 20 A;
V
IN
= high;
V
S
= 10 V;
T
J
= 150 °C
6.4.2 Nominal load current I
Dnom
7.8 9.7 – A
1)
V
on
= 0.5 V;
T
A
= 85 °C SMD
2)
;
V
IN
= 5.0 V;
V
S
≥ 10 V;
T
J
< 150 °C
6.4.3 ISO load current I
DISO
33 41 – A
1)
V
on
= 0.5 V;
T
C
= 85 °C;
V
IN
= 5.0 V;
V
S
≥ 10 V;
T
J
< 150 °C
6.4.4 Off state drain current I
DSS
– 6 12 µA V
bb
= 32 V;
V
IN
= 0.0 V
6.4.5 – 1 2 µA
1)
V
bb
= 13.5 V;
V
IN
= 0.0 V;
T
J
= 85 °C
Dynamic Characteristics
6.4.6
Turn-on delay t
ond
20 75 110 µs R
L
= 2.2 Ω;
V
bb
= V
S
= 13.5 V
6.4.7 Turn-on time t
on
80 150 250 µs R
L
= 2.2 Ω;
V
bb
= V
S
= 13.5 V
6.4.8 Turn-off delay t
offd
20 75 110 µs R
L
= 2.2 Ω;
V
bb
= V
S
= 13.5 V
6.4.9 Turn-off time t
off
80 150 250 µs R
L
= 2.2 Ω;
V
bb
= V
S
= 13.5 V
6.4.10 Slew rate on -dV
D
/dt
on
0.1 0.3 0.7 V/µs R
L
= 2.2 Ω;
V
bb
= V
S
= 13.5 V
6.4.11 Slew rate off dV
D
/dt
off
0.1 0.3 0.7 V/µs R
L
= 2.2 Ω;
V
bb
= V
S
= 13.5 V
6.4.12 Slew rate during edge shaping |dI/dt|
slow
– 0.04 0.07 A/µs
1)
R
L
= 2.2 Ω
V
bb
= V
S
= 13.5 V;
ohmic load