Datasheet

Datasheet 2 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3134D
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter
Symbol Value Unit
Drain source voltage V
DS
42 V
Drain source voltage for short circuit protection
T
j
= -40...150°C
V
DS(SC)
30
Continuous input current
-0.2V V
IN
10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
no limit
| I
IN
| 2
mA
Operating temperature T
j
-40 ...+150
°C
Storage temperature T
stg
-55 ... +150
Power dissipation
T
C
= 85 °C
6cm
2
cooling area , T
A
= 85 °C
P
tot
43
1.1
W
Unclamped single pulse inductive energy
1)
E
A
S
3
J
Load dump protection V
LoadDump
2)
= V
A
+ V
S
V
IN
= 0 and 10 V, t
d
= 400 ms, R
I
= 2 ,
R
L
= 4.5 , V
A
= 13.5 V
V
LD
65 V
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD
2 kV
Thermal resistance
junction - case:
R
thJC
1.5 K/W
SMD: junction - ambient
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
115
55
1
Not tested, specified by design.
2
V
Loaddump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.