Datasheet

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Datasheet 1 Rev. 1.3, 2006-12-22

Smart Low Side Power Switch

Power HITFET BTS 3134D

Product Summary

Drain source voltage

42 V

On-state resistance R

(

)

50 m

Nominal load current I

(

Nom

)

3.5 A

Clamping energy E

3 J

Application

All kinds of resistive, inductive and capacitive loads in switching

or linear applications

µC compatible power switch for 12 V DC applications

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded

protection functions.

Gate-Driving

Unit

ESD

Overload

Protection

Over-

temperature

Protection

Short circuit

Protection

Overvoltage-

Protection

Current

Limitation

Vbb

Source

Drain

HITFET

Pin 1

Pin 2 and 4 (TAB)

Pin 3

Features

· Logic Level Input

· Input Protection (ESD)

· Thermal shutdown

• Green product (RoHS compliant)

· Overload protection

· Short circuit protection

· Overvoltage protection

· Current limitation

· Analog driving possible

P / PG-TO252-3-11

Summary of content (11 pages)

PAGE 1
Smart Low Side Power Switch Power HITFET BTS 3134D Features Product Summary · Logic Level Input Drain source voltage VDS 42 · Input Protection (ESD) On-state resistance RDS(on) 50 m · Thermal shutdown Nominal load current I D(Nom) 3.
PAGE 2
Smart Low Side Power Switch Power HITFET BTS 3134D Maximum Ratings at T j = 25°C, unless otherwise specified Symbol Parameter Value Drain source voltage VDS 42 Drain source voltage for short circuit protection VDS(SC) 30 Unit V T j = -40...150°C IIN Continuous input current mA -0.2V VIN 10V no limit VIN < -0.2V or VIN > 10V Operating temperature | IIN | 2 Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation Ptot W T C = 85 °C 43 6cm 2 1.
PAGE 3
Smart Low Side Power Switch Power HITFET BTS 3134D Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 10 µA Characteristics VDS(AZ) Drain source clamp voltage Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C IDSS VDS = 32 V, VIN = 0 V VIN(th) Input threshold voltage V ID = 0.7 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 0.7 mA, Tj = 150 °C 0.
PAGE 4
Smart Low Side Power Switch Power HITFET BTS 3134D Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. t on - 60 100 t off - 60 100 -dV DS/dt on - 0.3 1.5 dV DS/dt off - 0.7 1.5 Dynamic Characteristics VIN to 90% I D: R L = 4.7 , VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: Turn-on time R L = 4.7 , VIN = 10 to 0 V, Vbb = 12 V 70 to 50% Vbb: R L = 4.
PAGE 5
Smart Low Side Power Switch Power HITFET BTS 3134D Block diagram Inductive and overvoltage output clamp Terms RL V D Z 2 I IN 1 D IN ID VDS Vbb HITFET S S 3 VIN HITFET Short circuit behaviour Input circuit (ESD protection) V IN Gate Drive Input I Source/ Ground IN I D T t t t j t Datasheet 5 Rev. 1.
PAGE 6
Smart Low Side Power Switch Power HITFET BTS 3134D 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TC) resp. Ptot = f(TA) @ R thJA=55 K/W R ON=f(Tj); I D=3A; VIN=10V 3 100 m max. W Rthjc = 1.5 K/W RDS(on) 80 Ptot 2 SMD @ 6cm2 1.5 70 typ. 60 50 40 1 30 20 0.5 10 0 -50 -25 0 25 50 75 100 °C 0 -50 150 -25 0 25 50 75 100 125 °C TA;TC 3 On-state resistance 4 Typ. input threshold voltage R ON=f(Tj); ID =3A; VIN=5V VIN(th) = f(T j); ID = 0.
PAGE 7
Smart Low Side Power Switch Power HITFET BTS 3134D 5 Typ. transfer characteristics 6 Typ. short circuit current ID =f(VIN ); VDS=12V; TJstart=25°C I D(lim) = f(Tj); VDS=12V Parameter: V IN 30 A A I D(SC) 30 ID 20 20 Vin=10V 15 15 10 10 5 5 0 0 1 2 3 4 5 6 7 8 V 0 -50 10 5V -25 0 25 50 75 100 125 °C VIN 175 Tj 7 Typ. output characteristics 8 Typ. off-state drain current ID =f(VDS ); TJstart =25°C IDSS = f(Tj ) Parameter: V IN 35 11 µA max.
PAGE 8
Smart Low Side Power Switch Power HITFET BTS 3134D 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb =12 V, no heatsink Parameter: Tjstart Z thJA=f(tp) @ 6 cm2 cooling area Parameter: D=tp/T 10 40 2 K/W A D=0.5 -40°C 10 1 0.2 0.1 ZthJA I D(lim) 30 25°C 25 0.05 10 0 0.02 0.
PAGE 9
Smart Low Side Power Switch Power HITFET BTS 3134D Package Outlines Package Outlines 6.5 +0.15 -0.05 A 0.15 MAX. per side B (5) 0.5 +0.08 -0.04 0.9 +0.20 -0.01 0...0.15 0.8 ±0.15 (4.24) 1 ±0.1 9.98 ±0.5 6.22 -0.2 5.4 ±0.1 2.3 +0.05 -0.10 0.51 MIN. 1 3x 0.75 ±0.1 0.5 +0.08 -0.04 2.28 4.57 0.1 B 0.25 M A B All metal surfaces tin plated, except area of cut.
PAGE 10
Smart Low Side Power Switch Power HITFET BTS 3134D Revision History 2 Revision History Version Rev. 1.3 Date Changes 2006-12-22 released automotive green and robust version (BTS) Package parameter (humidity and climatic) removed in Maximum ratings Rev. 1.2 2006-12-11 AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2006-08-08 released non automotive green version (ITS) Rev. 1.
PAGE 11
Edition 2006-12-22 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).