Datasheet

Datasheet 4 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 142D
Electrical Characteristics
Parameter
Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 4.7 W, V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
- 60 120
µs
Turn-off time V
IN
to 10% I
D
:
R
L
= 4.7 W, V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
- 60 120
Slew rate on 70 to 50% V
bb
:
R
L
= 4.7 W, V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
- 0.3 1.5
V/µs
Slew rate off 50 to 70% V
bb
:
R
L
= 4.7 W, V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
- 0.3 1.5
Protection Functions
1)
Thermal overload trip temperature T
j
t
150 175 - °C
Thermal hysteresis
2)
DT
j
t
- 10 - K
Input current protection mode
T
j
= 150 °C
I
IN(Prot)
- 180 400 µA
Unclamped single pulse inductive energy
2)
I
D
= 4.6 A, T
j
= 25 °C, V
bb
= 12 V
E
AS
3.5 - - J
Inverse Diode
Inverse diode forward voltage
I
F
= 51 A, t
m
= 250 µs, V
IN
= 0 V,
t
P
= 300 µs
V
SD
- 1.0 1.5
V
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2
not subject to production test, specified by design