Datasheet

Electrical Characteristics
Parameter
Symbol Values Unit
at T
j
=25°C, unless otherwise specified min. typ. max.
Characteristics
Initial peak short circuit current limit
V
IN
= 10 V, V
DS
= 12 V
I
D(SCp)
- 100 - A
Current limit
1)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 350 μs,
T
j
= -40...+150 °C
I
D(lim)
25 35 50
Dynamic Characteristics
Turn-on time V
IN
to 90% I
D
:
R
L
= 2,2 Ω, V
IN
= 0 to 10 V, V
bb
= 12 V
t
on
- 40 100 μs
Turn-off time V
IN
to 10% I
D
:
R
L
= 2,2 Ω, V
IN
= 10 to 0 V, V
bb
= 12 V
t
off
- 70 170
Slew rate on 70 to 50% V
bb
:
R
L
= 2,2 Ω, V
IN
= 0 to 10 V, V
bb
= 12 V
-dV
DS
/dt
on
- 1 3 V/μs
Slew rate off 50 to 70% V
bb
:
R
L
= 2,2 Ω, V
IN
= 10 to 0 V, V
bb
= 12 V
dV
DS
/dt
off
- 1 3
Protection Functions
Thermal overload trip temperature
T
j
t
150 165 - °C
Unclamped single pulse inductive energy
I
D
= 12 A, T
j
= 25 °C, V
bb
= 32 V
I
D
= 12 A, T
j
= 150 °C, V
bb
= 32 V
E
AS
4000
900
-
-
-
-
mJ
Inverse Diode
Inverse diode forward voltage
I
F
= 5*12A, t
m
= 300 μS, V
IN
= 0 V
V
SD
- 1.13 - V
1
Device switched on into existing short circuit (see diagram Determination of I
D(lim)
). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 μs.
2
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2)
Datasheet 4 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC