Datasheet

Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Value Unit
Drain source voltage
V
DS
60 V
Drain source volta
g
e for short circuit
p
rotection
V
DS
(
SC
)
32
Continuous input current
1)
-0.2V ≤ V
IN
≤ 10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
no limit
| I
IN
| ≤ 2
mA
Operating temperature
T
j
- 40 ... +150 °C
Storage temperature
T
st
g
- 55 ... +150
Power dissipation
T
C
= 25 °C
P
tot
149 W
Unclamped single pulse inductive energy
I
D(ISO)
= 12 A
E
AS
4000 mJ
Electrostatic discharge voltage (Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD
3000 V
Load dump protection V
LoadDump
2)
= V
A
+ V
S
V
IN
=low or high; V
A
=13.5 V
t
d
= 400 ms, R
I
= 2 Ω, I
D
=0,5*12A
t
d
= 400 ms, R
I
= 2 Ω, I
D
= 12A
V
LD
100
84
Thermal resistance
junction - case:
R
thJC
0.84 K/W
junction - ambient:
R
thJ
A
75
SMD version, device on PCB:
3)
R
thJ
A
45
1
In case of thermal shutdown a minimum sensor holding current of 500 μA has to be guaranteed (see also page 3).
2
V
Loaddump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70μm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
Datasheet 2 Rev. 1.0, 2009-07-20
Smart Low Side Power Switch
HITFET BTS 141TC