Datasheet

ManualsBrandsINFINEON TECHNOLOGIES ManualsPMICsPMIC - ELCs Low side TO 263 3

Features

• Logic Level Input

• Input Protection (ESD)

•=Thermal shutdown with latch

• Overload protection

• Short circuit protection

• Overvoltage protection

• Current limitation

• Status feedback with external input resistor

• Analog driving possible

Product Summary

Drain source voltage

60 V

On-state resistance

(

)

mΩ

Current limit

(

lim

)

25 A

Nominal load current

(

ISO

)

12 A

Clamping energy

4000 mJ

Application

• All kinds of resistive, inductive and capacitive loads in switching or

linear applications

• μC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS

chip on chip tech-

nology. Providing embedded protection functions.

protection

O vervoltage

Drain

ESD

HITFET

Source

Current

O ver-

protection

temperature

Short circuit

protection

dv/dt

lim itation limitation

Short circuit

protection

LO AD

O verload

protection

• AEC qualified

• Green product (RoHS compliant)

Datasheet 1 Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 141TC

Summary of content (11 pages)

PAGE 1
Smart Low Side Power Switch HITFET BTS 141TC Features Product Summary • Logic Level Input Drain source voltage VDS 60 V • Input Protection (ESD) On-state resistance RDS(on) 28 mΩ •=Thermal shutdown with latch Current limit I D(lim) 25 A • Overload protection Nominal load current I D(ISO) 12 A • Short circuit protection Clamping energy EAS 4000 mJ • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible • AEC qualifie
PAGE 2
Smart Low Side Power Switch HITFET BTS 141TC Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Drain source voltage VDS 60 Drain source voltage for short circuit protection Continuous input current 1) VDS(SC) 32 Value Unit V IIN mA -0.2V ≤ VIN ≤ 10V no limit VIN < -0.2V or VIN > 10V | IIN | ≤ 2 Operating temperature Tj - 40 ... +150 Storage temperature Tstg - 55 ...
PAGE 3
Smart Low Side Power Switch HITFET BTS 141TC Electrical Characteristics Parameter Symbol at Tj=25°C, unless otherwise specified Values Unit min. typ. max. 60 - 73 V - - 20 μA 1.3 1.7 2.2 V μA Characteristics Drain source clamp voltage VDS(AZ) Tj = - 40 ...+ 150°C, ID = 10 mA Off state drain current IDSS VDS = 32 V, Tj = -40...
PAGE 4
Smart Low Side Power Switch HITFET BTS 141TC Electrical Characteristics Parameter Symbol at T j=25°C, unless otherwise specified Values Unit min. typ. max. - 100 - 25 35 50 ton - 40 100 toff - 70 170 -dVDS/dton - 1 3 dVDS/dtoff - 1 3 150 165 - Characteristics ID(SCp) Initial peak short circuit current limit A VIN = 10 V, VDS = 12 V ID(lim) Current limit 1) VIN = 10 V, VDS = 12 V, tm = 350 μs, Tj = -40...
PAGE 5
Smart Low Side Power Switch HITFET BTS 141TC Block Diagramm Terms Inductive and overvoltage output clamp RL V Z D 2 I IN 1 D IN ID VDS Vbb S HITFET S 3 HITFET VIN Short circuit behaviour Input circuit (ESD protection) V IN I D(SCp) IN I D(Lim) ID ESD-ZD I Source t0 ESD zener diodes are not designed for DC current > 2 mA @ VIN >10V.
PAGE 6
Smart Low Side Power Switch HITFET BTS 141TC Maximum allowable power dissipation On-state resistance Ptot = f(Tc ) RON = f(Tj ); ID=12A; VIN =10V BTS 141 60 160 Ω W RDS(on) Ptot 120 100 40 max. 30 80 typ. 60 20 40 10 20 0 0 20 40 60 80 100 120 °C 0 -50 160 -25 0 25 50 75 100 °C 150 Tj 150 On-state resistance Typ. input threshold voltage R ON = f(Tj ); ID= 12A; V IN=5V VIN(th) = f(Tj); ID =2,7mA; VDS =12V 70 2.0 V Ω 50 VIN(th) RDS(on) 1.6 max. 40 1.4 1.
PAGE 7
Smart Low Side Power Switch HITFET BTS 141TC Typ. transfer characteristics Typ. output characteristic ID = f(VIN); VDS =12V; Tj =25°C ID = f(VDS); Tj =25°C Parameter: V IN 28 35 A A 10V 6V 5V 20 25 ID ID 4V 16 20 12 15 8 10 4 5 0 0 1 2 3 4 5 V 6 0 0 8 VIN Vin=3V 1 2 3 4 V 6 VDS Transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 K/W 0 ZthJC 10 D=0.5 0.2 10 -1 0.1 0.05 0.02 10 -2 0.01 0.
PAGE 8
Smart Low Side Power Switch HITFET BTS 141TC Application examples: Status signal of thermal shutdown by monitoring input current R St IN μC V IN D HITFET V bb S ΔV V IN thermal shutdown ΔV = RST *IIN(3) Datasheet 8 Rev. 1.
PAGE 9
Smart Low Side Power Switch HITFET BTS 141TC Package Outlines 1 Package Outlines 4.4 10 ±0.2 1.27 ±0.1 A 8.5 1) B 0.05 4.7 ±0.5 2.7 ±0.3 2.4 0.1 1.3 ±0.3 7.55 1) 9.25 ±0.2 (15) 1 ±0.3 0...0.3 0...0.15 1.05 0.5 ±0.1 0.75 ±0.1 8˚ MAX. 2.54 5.08 0.25 A B M 1) Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. Figure 1 0.
PAGE 10
Smart Low Side Power Switch HITFET BTS 141TC Revision History 2 Version Rev. 1.0 Datasheet Revision History Date Changes 2009-07-20 released initial Datasheet 10 Rev. 1.
PAGE 11
Edition 2009-07-20 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”).