Datasheet

PG-TO263-15-1
Type Package Marking
BTM7811K PG-TO263-15-1 BTM7811K
Data Sheet 3 Rev. 1.0, 2008-05-15
TrilithIC
BTM7811K
1Overview
Features
Quad D-MOS switch
Free configurable as bridge or quad-switch
Optimized for DC motor management applications
•Low
R
DS ON
High side: 26 mΩ typ. @ 25°C, 65 mΩ max. @ 110°C
Low side: 14mΩ typ. @ 25°C, 28 mΩ max. @ 110°C
Maximum peak current: typ. 42 A @ 25 °C
Very low quiescent current: typ. 4 μA @ 25 °C
Thermally optimized power package
Operates up to 40 V
PWM capability up to 25 kHz
Load and GND-short-circuit-protection
Overtemperature shut down with hysteresis
Undervoltage detection with hysteresis
Open load detection in OFF mode
Status flag for overtemperature
Internal clamp diodes
Isolated sources for external current sensing
Green Product (RoHS compliant)
AEC Qualified
Description
The BTM7811K is part of the TrilithIC family containing three dies in one package: One double high-side switch
and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames.
The sources are connected to individual pins, so the BTM7811K can be used in H-bridge- as well as in any other
configuration. The double high-side switch is manufactured in SMART SIPMOS
®
technology which combines low
R
DS ON
vertical DMOS power stages with CMOS circuitry for control, protection and diagnosis. To achieve low
R
DS ON
and fast switching performance, the low-side switches are manufactured in S-FET logic level technology.