Datasheet
PG-TO263-15-1
Type Package Marking
BTM7811K PG-TO263-15-1 BTM7811K
Data Sheet 3 Rev. 1.0, 2008-05-15
TrilithIC
BTM7811K
1Overview
Features
• Quad D-MOS switch
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
•Low
R
DS ON
High side: 26 mΩ typ. @ 25°C, 65 mΩ max. @ 110°C
Low side: 14mΩ typ. @ 25°C, 28 mΩ max. @ 110°C
• Maximum peak current: typ. 42 A @ 25 °C
• Very low quiescent current: typ. 4 μA @ 25 °C
• Thermally optimized power package
• Operates up to 40 V
• PWM capability up to 25 kHz
• Load and GND-short-circuit-protection
• Overtemperature shut down with hysteresis
• Undervoltage detection with hysteresis
• Open load detection in OFF mode
• Status flag for overtemperature
• Internal clamp diodes
• Isolated sources for external current sensing
• Green Product (RoHS compliant)
• AEC Qualified
Description
The BTM7811K is part of the TrilithIC family containing three dies in one package: One double high-side switch
and two low-side switches. The drains of these three vertical DMOS chips are mounted on separated lead frames.
The sources are connected to individual pins, so the BTM7811K can be used in H-bridge- as well as in any other
configuration. The double high-side switch is manufactured in SMART SIPMOS
®
technology which combines low
R
DS ON
vertical DMOS power stages with CMOS circuitry for control, protection and diagnosis. To achieve low
R
DS ON
and fast switching performance, the low-side switches are manufactured in S-FET logic level technology.