Datasheet

Data Sheet 13 Rev. 1.0, 2008-05-15
BTM7811K
Output stages
5.4.11 Inverse diode of high-side switch;
Forward-voltage
V
FH
–0.81.2VI
FH
= 5 A
5.4.12 Inverse diode of low-side switch;
Forward-voltage
V
FL
–0.81.2VI
FL
= 5 A
5.4.13 Static drain-source on-resistance of
high-side switch
R
DS ON H
–26–mΩ I
SH
=5A; V
S
= 12 V
T
j
= 25 °C
–4565mΩ
I
SH
=5A; V
S
= 12 V
T
j
= 110°C
2)
5.4.14 Static drain-source
on-resistance of low-side switch
R
DS ON L
–14–mΩ I
SL
=5A; V
IL
= 5 V
T
j
= 25 °C
–2028mΩ
I
SL
=5A; V
IL
= 5 V
T
j
= 110 °C
2)
5.4.15 Maximum load current for cross
current free operation
2)
V
IL
= 7V; R
Gate
= 50Ω; T
j
= 110 °C
I
Lmax ccf
711–AVs > 8V
–14–AVs = 10V
–17–AVs = 12V
Note: The device is regarded as cross current free if the reverse flowing charge through the high side switch is
less than 1µC.
Figure 4 : Start of Cross Conduction vs.
I
L
, V
S
and junction Temperature T
j
Electrical Characteristics
I
SH1
= I
SH2
= I
SL1
= I
SL2
= 0 A; – 40 °C < T
j
< 110 °C; 8 V < V
S
< 18 V (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
i_cross_start
0
20 40 60 80 100 120 °C
10
20
30
40
60
T
j
A I
L
8V
12V
16V
20V