Datasheet

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BTM7811K

TrilithIC

Data Sheet, Rev. 1.0, May 2008

Automotive Power

Summary of content (19 pages)

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Data Sheet, Rev. 1.
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BTM7811K Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 2.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin Assignment . . .
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TrilithIC 1 BTM7811K Overview Features • • • • • • • • • • • • • • • • • • Quad D-MOS switch Free configurable as bridge or quad-switch Optimized for DC motor management applications Low RDS ON High side: 26 mΩ typ. @ 25°C, 65 mΩ max. @ 110°C Low side: 14mΩ typ. @ 25°C, 28 mΩ max. @ 110°C Maximum peak current: typ. 42 A @ 25 °C Very low quiescent current: typ.
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BTM7811K Description 2 Pin Configuration 2.1 Pin Assignment Molding Compound NC 1 SL1 2 IL1 3 NC 4 IH1 5 ST1 6 SH1 7 DHVS 8 GND 9 IH2 10 ST2 11 SH2 12 Heat-Slug 1 18 DL1 Heat-Slug 2 17 DHVS Heat-Slug 3 IL2 13 16 Figure 1 Data Sheet SL2 14 NC 15 DL2 Pin Assignment BTM7811K (Top View) 4 Rev. 1.
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BTM7811K Description Table 1 Pin No.
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BTM7811K Description 2.
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BTM7811K Description 3 Block Diagram DHVS 6 8, 17 ST1 ST2 IH1 IH2 11 5 10 Diagnosis Biasing and Protection Driver IN OUT 0 0 L L 0 1 L H 1 0 H L 1 1 H H RO1 RO2 12 16 SH2 DL2 9 GND 7 18 SH1 DL1 3 IL1 13 IL2 2 SL1 Figure 3 Data Sheet 14 SL2 Block Diagram BTM7811K 7 Rev. 1.
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BTM7811K 4 Circuit Description 4.1 Input Circuit The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the gates of the standard N-channel vertical power-MOS-FETs. 4.2 Output Stages The output stages consist of an low RDSON Power-MOS H-bridge.
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BTM7811K 4.7 Status Flag The status flag outputs are open drain outputs with zener-diode which require a pull-up resistor, as shown in the application circuit in Figure 5 “Application Example BTM7811K” on Page 16. Various errors as listed in the table “Diagnosis” are reported by switching the open drain output ST to low.
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BTM7811K 5 Electrical Characteristics 5.1 Absolute Maximum Ratings Absolute Maximum Ratings1) -40 °C < Tj < 110 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Remarks min. max. VS VS(SCP) – 0.3 42 V – 28 V IS IIH VIH – 14 3) A TA = 25°C; tP < 100 ms –5 5 mA Pin IH1 and IH2 – 10 16 V Pin IH1 and IH2 VST IST – 0.3 5.
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BTM7811K 5.2 Pos. Functional Range Parameter Symbol Limit Values min. max. Unit Remarks 5.2.1 Supply voltage VS VUVOFF 42 V After VS rising above VUVON 5.2.2 Supply voltage for PWM operation 8 18 V – 5.2.3 Input voltage HS – 0.3 15 V – 5.2.4 Input voltage LS – 0.3 20 V – 5.2.5 Status output current 0 2 mA – 5.2.6 Junction temperature VS(PWM) VIH VIL IST Tj – 40 110 °C – Note: Within the functional range the IC operates as described in the circuit description.
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BTM7811K 5.4 Electrical Characteristics Electrical Characteristics ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. – 4 9 μA IH1 = IH2 = 0 V Tj = 25 °C – – 15 μA IH1 = IH2 = 0 V Current Consumption HS-switch 5.4.1 Quiescent current IS 5.4.2 Supply current; one HS-switch active IS – 4 8 mA IH1 or IH2 = 5 V VS = 12 V 5.4.
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BTM7811K Electrical Characteristics ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. Output stages 5.4.11 Inverse diode of high-side switch; Forward-voltage VFH – 0.8 1.2 V IFH = 5 A 5.4.12 Inverse diode of low-side switch; Forward-voltage VFL – 0.8 1.2 V IFL = 5 A 5.4.
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BTM7811K Electrical Characteristics ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. 35 48 65 Short Circuit of high-side switch to GND 5.4.16 Initial peak SC current1) tdel = 150 µs; VS = 12 V; VDSH = 12V 27 36 48 A Tj = -40 °C Tj = 25°C Tj = 110°C2) RO 7 14 42 kΩ VDSL = 3 V ISCP H 42 A A Short Circuit of high-side switch to VS 5.4.
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BTM7811K Electrical Characteristics ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. 5.4.38 Input to drain charge; QID – 12 – nC 5.4.39 Input charge total; QI – 30 60 nC 5.4.40 Input plateau voltage; V(plateau) – 2.6 – V VIH High VIH Low VIH HY IIH High IIH Low RI VIH Z – – 3.0 V – 1 – – V – – 0.
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BTM7811K 6 Application Information Note: The following simplified application examples are given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.
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BTM7811K 7 Package Outlines 21.6 ±0.2 8.3 1) 4.4 5.56 ±0.15 1.27 ±0.1 B 0.1 A 4.7 ±0.5 14x1.4 0.05 2.4 8.41) 8.21) 4.8 9.25 ±0.2 (15) 1±0.3 8.18 ±0.15 1) 2.7 ±0.3 1±0.2 0...0.15 0.8 ±0.1 0.5 ±0.1 8˚ max. 0.25 1) M A B 0.1 Typical All metal surfaces tin plated, except area of cut. Footprint 21.6 8.4 4 16 9.5 0.8 0.
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BTM7811K 8 Revision History Rev. Date Changes 1.0 2008-05-15 Initial Version Data Sheet 18 Rev. 1.
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Edition 2008-05-15 Published by Infineon Technologies AG 81726 Munich, Germany © 5/14/08 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.