Datasheet

BTM7810K
Data Sheet 12 Rev. 1.0, 2008-05-15
5.4 Electrical Characteristics
Electrical Characteristics
I
SH1
= I
SH2
= I
SL1
= I
SL2
= 0 A; – 40 °C < T
j
< 110 °C; 8 V < V
S
< 18 V (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Current Consumption HS-switch
5.4.1 Quiescent current
I
S
–49μA IH1 = IH2 = 0 V
T
j
= 25 °C
––15μA IH1 = IH2 = 0 V
5.4.2 Supply current;
one HS-switch active
I
S
– 2.5 4.5 mA IH1 or IH2 = 5 V
V
S
= 12 V
5.4.3 Supply current;
both HS-switches active
I
S
–59mAIH1 and IH2 = 5V
V
S
= 12 V
5.4.4 Leakage current of
high-side switch
I
SH LK
––7μA V
IH
= V
S
H
= 0 V
V
S
= 12 V
T
j
= 85 °C
5.4.5 Leakage current through logic GND
in free wheeling condition
I
LKCL =
I
FH +
I
SH
–2.210mAI
FH
= 5 A
V
S
= 12 V
Current Consumption LS-switch
5.4.6 Input current
I
IL
– 10 100 nA V
IL
= 20 V;
V
DSL
= 0V
5.4.7 Leakage current of low-side switch
I
DL LK
––12μA V
IL
= 0 V
V
DSL
= 40V
T
j
= 85 °C
Under Voltage Lockout HS-switch
5.4.8 Switch-ON voltage
V
UVON
––5VV
S
increasing
5.4.9 Switch-OFF voltage
V
UVOFF
1.8– 4.5VV
S
decreasing
5.4.10 Switch ON/OFF hysteresis
V
UVHY
–1–VV
UVON
– V
UVOF
F
Output stages
5.4.11 Inverse diode of high-side switch;
Forward-voltage
V
FH
–0.81.2VI
FH
= 5 A
5.4.12 Inverse diode of low-side switch;
Forward-voltage
V
FL
–0.81.2VI
FL
= 5 A
5.4.13 Static drain-source on-resistance of
high-side switch
R
DS ON H
–26–mΩ I
SH
=5A; V
S
= 12 V
T
j
= 25 °C
–4565mΩ
I
SH
=5A; V
S
= 12 V
T
j
= 110°C
2)
5.4.14 Static drain-source
on-resistance of low-side switch
R
DS ON L
–14–mΩ I
SL
=5A; V
IL
= 5 V
T
j
= 25 °C
–2028mΩ
I
SL
=5A; V
IL
= 5 V
T
j
= 110 °C
2)