Datasheet

High Current H-Bridge
BTM7752G
General Product Characteristics
Data Sheet 6 Rev. 2.0, 2010-05-28
5 General Product Characteristics
5.1 Absolute Maximum Ratings
T
j
= -40 °C to +150 °C; all voltages with respect to ground (unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
Supply voltage V
S
-0.3 45 V –
Logic Input Voltage V
IN1,
V
IN2,
V
INH
-0.3 5.5 V –
HS/LS continuous drain current I
D(HS)
I
D(LS)
-4 4 A T
C
< 85°C
switch active
Voltage between VS and IS pin V
S
-V
IS
-0.3 45 V –
Thermal Maximum Ratings
Junction temperature T
j
-40 150 °C
–
Storage temperature T
stg
-55 150 °C –
ESD Susceptibility
ESD susceptibility
IN1, IN2, IS, INH
OUT1, OUT2, GND, VS
V
ESD
-2
-4
2
4
kV
2) HBM according to EIA/JESD 22-A 114B (1.5 kΩ, 100pF)
HBM
2)
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Absolute Maximum Ratings
1)
1) Not subject to production test, specified by design.
5.1.1
5.1.2
5.1.3
5.1.4
5.1.5
5.1.6
5.1.7