Datasheet

Data Sheet 21 Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Application Information
7 Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
XC866
TLE
4278G
V
S
Reset
Vss
WO
RO
Q
D
GND
I
Microcontroller
Reverse Polarity
Protection
Voltage Regulator
I/O I/O I/O
I/O
C
D
47nF
C
Q
22µF
R
1
10kΩ
e.g.
IPD50P03P4L-11
VS
OUT1
INH
GND
BTM7752G
C
Sc
IN2
IS
IN1
VS
OUT2
GND
LS2LS1
HS2HS1
M
R
IS
1kΩ
R
D1
R
D2
C
S
D
Z1
10V
I/O I/O
I/O
Vdd
R
IN1
4.7kΩ
R
IN2
4.7kΩ
R
INH
4.7kΩ
Figure 15 Application Diagram
Note: This is a very simplified example of an application circuit. The function must be verified in the real application.
7.1 Application and Layout Considerations
Due to the fast switching times for high currents, special care has to be taken during the PCB layout. Stray
inductances have to be minimized in the power bridge design as it is necessary in all switched high power bridges.
The BTM7752G has no separate pin for power ground and logic ground. Therefore it is recommended to ensure
that the offset between power ground and logic ground pins of the device is minimized. It is also
necessary to ensure that all VS pins are at the same voltage level. Therefore the VS pins need to be
shorted together. Voltage differences between the VS pins may cause parameter deviations (such as reduced
current limits and current sense ratio (kilis)) up to a latched shutdown of the device with error signal on the IS pin,
similar to overtemperature shutdown.
Due to the fast switching behavior of the device in current limitation mode or overvoltage lock out a low ESR
electrolytic capacitor
C
s
of at least 100 µF from VS to GND is recommended. This prevents destructive voltage
peaks and drops on VS. This is recommended for both PWM and non PWM controlled applications. The value of
the capacitor must be verified in the real application.
In addition a ceramic capacitor C
sc
from VS to GND close to each device is recommended to provide current for
the switching phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable
value for this capacitor would be about 470 nF.