Datasheet

Data Sheet 11 Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.2.1
Pos. Parameter Symbol Limit Values Unit Test Conditions
Min. Typ. Max.
On state high side resistance R
ON(HS)
–
–
60
85
–
115
mΩ I
OUT
= 1 A
V
S
= 13.5 V
T
j
= 25 °C;
1) Not subject to production test, specified by design.
Leakage current high side I
L(LKHS)
–
–
–
–
1
5
µA V
INH
= V
IN1
= V
IN2
= 0 V
V
OUT
= 0 V
T
j
< 85 °C;
1)
T
j
= 150 °C
Reverse diode
forward-voltage high side
2) Due to active freewheeling diode is conducting only for a few µs.
2)
V
DS(HS)
–
–
–
0.9
0.8
0.6
–
–
0.8
V I
OUT
= -1 A
T
j
= -40 °C;
1)
T
j
= 25 °C;
1)
T
j
= 150 °C
Low Side Switch - Static Characteristics
On state low side resistance R
ON(LS)
–
–
90
150
–
180
mΩ I
OUT
= -1 A
V
S
= 13.5 V
T
j
= 25 °C;
1)
T
j
= 150 °C
Leakage current low side -I
L(LKLS)
–
–
–
–
1
3
µA V
INH
= V
IN1
= V
IN2
= 0 V
V
OUT
= V
S
T
j
< 85 °C;
1)
T
j
= 150 °C
Reverse diode
forward-voltage low side
2)
V
SD(LS)
–
–
–
0.9
0.8
0.6
–
–
0.8
V I
OUT
= 1 A
T
j
= -40 °C;
1)
T
j
= 25 °C;
1)
T
j
= 150 °C
1)
T
j
= 150 °C
Power Stages - Static Characteristics
V
S
= 8 V to 18 V, T
j
= -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current
flowing into pin (unless otherwise specified)
High Side Switch - Static Characteristics
6.2.1
6.2.2
6.2.3
6.2.4
6.2.5
6.2.6