Datasheet

Data Sheet 10 Rev. 2.0, 2010-05-28
High Current H-Bridge
BTM7752G
Block Description and Characteristics
6.2 Power Stages
The power stages of the BTM7752G consist of p-channel vertical DMOS transistors for the high side switches and
n-channel vertical DMOS transistors for the low side switches. All protection and diagnostic functions are located
in a separate control chip. Both switches, high side and low side, allow active freewheeling and thus minimize
power dissipation in the forward operation of the integrated diodes.
The on state resistance R
ON
is dependent on the supply voltage V
S
as well as on the junction temperature T
j
. The
typical on state resistance characteristics are shown in
Figure 7.
0
20
40
60
80
10 0
12 0
14 0
16 0
4 8 12 16 2 0 2 4 2 8
V
S
[V]
R
ON( HS)
[mΩ]
T
j
= 150°C
T
j
= 25°C
T
j
= -40°C
High Side Switch
0
20
40
60
80
10 0
12 0
14 0
16 0
18 0
200
220
4 8 12 16 20 24 28
T
j
= 150°C
T
j
= 25°C
T
j
= -40°C
Low Side Switch
V
S
[V]
R
ON(LS)
[mΩ]
Figure 7 Typical On State Resistance vs. Supply Voltage