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BTM7752G

High Current H-Bridge

Trilith IC 3G

Data Sheet, Rev. 2.0, May 2010

Automotive Power

Summary of content (25 pages)

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Data Sheet, Rev. 2.
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High Current H-Bridge BTM7752G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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High Current H-Bridge Trilith IC 3G 1 BTM7752G Overview Features • • • • • • • • • • • • • • • Integrated high current H-Bridge Path resistance of max. 295 mΩ @ 150 °C (typ. 150 mΩ @ 25 °C) Low quiescent current of typ. 5µA @ 25 °C PWM capability of up to 25kHz combined with active freewheeling Current limitation level of 12 A typ. (8 A min.
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High Current H-Bridge BTM7752G Block Diagram 2 Block Diagram VS VS Overtemp. detection Current Sense HS1 HS1 Undervolt. detection Overcurr. Detection HS1 Current Sense HS2 Overvolt. detection Overcurr. Detection HS2 Gate Driver HS HS off OUT1 HS2 Gate Driver HS Digital Logic LS off LS off Gate Driver LS HS off OUT2 Gate Driver LS Overcurr. Detection LS1 Overcurr.
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High Current H-Bridge BTM7752G Pin Configuration 4 Pin Configuration 4.1 Pin Assignment OUT1 1 36 OUT1 OUT1 2 35 OUT1 OUT1 3 34 OUT1 OUT1 4 33 OUT1 GND 5 32 VS GND 6 31 VS GND 7 30 VS GND 8 29 VS IN1 9 28 IS IN2 10 27 INH VS 11 26 GND VS 12 25 GND VS 13 24 GND VS 14 23 GND OUT2 15 22 OUT2 OUT2 16 21 OUT2 OUT2 17 20 OUT2 OUT2 18 19 OUT2 Figure 3 Pin Configuration BTM7752G 4.
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High Current H-Bridge BTM7752G General Product Characteristics 5 General Product Characteristics 5.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = -40 °C to +150 °C; all voltages with respect to ground (unless otherwise specified) Pos. Parameter 5.1.1 Supply voltage 5.1.2 Logic Input Voltage 5.1.3 HS/LS continuous drain current 5.1.4 Voltage between VS and IS pin Symbol Limit Values Unit Conditions Min. Max. VS VIN1,VIN2, VINH ID(HS) ID(LS) VS -VIS -0.3 45 V – -0.3 5.
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High Current H-Bridge BTM7752G General Product Characteristics Maximum Single Pulse Current 20 Imax [A] 15 10 5 0 0.0001 0.001 0.01 0.1 1 10 100 tpulse [s] BTM7752G Maximum Single Pulse Current (TC = Tj(0) < 85°C) Figure 4 This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited due to thermal protection of the device. 5.2 Pos.
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High Current H-Bridge BTM7752G General Product Characteristics 5.3 Thermal Resistance Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information, go to www.jedec.org. Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Conditions 5.3.1 Thermal Resistance Junction to Soldering Point, Low Side Switch RthjSP(LS) = ΔTj(LS)/ Pv(LS) RthjSP(LS) – – 29 K/W 1) 5.3.
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High Current H-Bridge BTM7752G Block Description and Characteristics 6 Block Description and Characteristics 6.1 Supply Characteristics VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0A, VS pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Test Conditions General 6.1.1 Supply Current IS(on) – 5 9.
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High Current H-Bridge BTM7752G Block Description and Characteristics 6.2 Power Stages The power stages of the BTM7752G consist of p-channel vertical DMOS transistors for the high side switches and n-channel vertical DMOS transistors for the low side switches. All protection and diagnostic functions are located in a separate control chip. Both switches, high side and low side, allow active freewheeling and thus minimize power dissipation in the forward operation of the integrated diodes.
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High Current H-Bridge BTM7752G Block Description and Characteristics 6.2.1 Power Stages - Static Characteristics VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Unit Test Conditions mΩ IOUT = 1 A VS = 13.
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High Current H-Bridge BTM7752G Block Description and Characteristics 6.2.
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High Current H-Bridge BTM7752G Block Description and Characteristics 6.2.3 Power Stages - Dynamic Characteristics VS = 13.5V, Tj = -40 °C to +150 °C, RLoad = 12 Ω, VINH = 5V, VS pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Test Conditions High Side Switch Dynamic Characteristics 6.2.7 Rise-time of HS tr(HS) 0.35 0.7 1.05 µs – 6.2.8 Slew rate HS on ΔVOUT/ – 9.
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High Current H-Bridge BTM7752G Block Description and Characteristics 6.3.2 Undervoltage Shut Down To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (both outputs are tri-state), if the supply voltage VS drops below the switch-off voltage VUV(OFF). In this case all latches will be reset. The IC becomes active again with a hysteresis VUV(HY) if the supply voltage rises above the switch-on voltage VUV(ON). 6.3.
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High Current H-Bridge BTM7752G Block Description and Characteristics Low Side Switch High Side Switch 14 Tj = -40°C 13 ICLH0 I C L L [A] I C L H [A] 14 Tj = 25°C Tj = 150°C Tj = -40°C 13 ICLL0 Tj = 25°C Tj = 150°C 12 12 11 11 10 10 0 50 100 0 150 50 100 dIL/dt [A/ms] dIL/dt [A/ms] Current Limitation Level vs.
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High Current H-Bridge BTM7752G Block Description and Characteristics 6.3.5 Short Circuit Protection The device provides embedded protection functions against • • • output short circuit to ground output short circuit to supply voltage short circuit of load The short circuit protection is realized by the previously described current limitation in combination with the overtemperature shut down (see Chapter 6.3.3) of the device. 6.3.
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High Current H-Bridge BTM7752G Block Description and Characteristics 6.4 Control and Diagnostics 6.4.1 Input Circuit The control inputs INx and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the integrated gate drivers for the MOSFETs. To set the device in stand-by mode, INH and INx pins need to be all connected to GND.
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High Current H-Bridge BTM7752G Block Description and Characteristics IIS [mA] IIS(lim) er low is kil lue va u val lis i k her hig e Current Sense Mode (High Side) Error Flag Mode ICLx Figure 14 Data Sheet IL [A] Sense Current vs. Load Current 18 Rev. 2.
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High Current H-Bridge BTM7752G Block Description and Characteristics 6.4.
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High Current H-Bridge BTM7752G Block Description and Characteristics 6.4.5 Electrical Characteristics - Control and Diagnostics VS = 8 V to 18 V, Tj = -40 °C to +150 °C, VS pins shorted, all voltages with respect to ground, positive current flowing into pin (unless otherwise specified) Pos. Parameter Symbol Limit Values Min. Typ. Max. Unit Test Conditions Control Inputs (IN and INH) 6.4.1 High level threshold voltage VINH(H), – INH, IN1, IN2 VIN1(H), VIN2(H) 1.6 2 V – 6.4.
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High Current H-Bridge BTM7752G Application Information 7 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. Microcontroller Voltage Regulator XC866 WO I/O RO Reset Vdd I/O I/O I/O I/O I/O D Vss GND R1 10kΩ e.g.
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High Current H-Bridge BTM7752G Application Information It is recommended to do the freewheeling in the low side path to ensure a proper function and avoid unintended overtemperature detection and shutdown. For proper operation it is also recommended to put a pull-down resistor RDx on each output OUTx to GND with a value in the range of e.g. 1...10 kΩ. These resistors can also be used for open load detection. Considerations for Open Load Detection Mode As mentioned in Chapter 6.4.
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High Current H-Bridge BTM7752G Package Outlines C 17 x 0.65 = 11.05 0.33 ±0.08 1.1 7.6 -0.2 1) 0.1 C 36x SEATING PLANE 0.23 +0.09 0.35 x 45˚ 8˚ MAX. 0.65 2.65 MAX. Package Outlines 0.2 -0.1 STAND OFF 2.45 -0.2 8 0.7 ±0.2 10.3 ±0.3 D 2) 0.17 M C A-B D 36x A 36 1 19 Ejector Mark Depth 0.2 MAX. 18 B 1) 12.8 -0.2 Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max.
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High Current H-Bridge BTM7752G Revision History 9 Revision History Revision Date Changes 2.0 2010-05-28 Initial version Data Sheet Data Sheet 24 Rev. 2.
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Edition 2010-05-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.