Datasheet

BTM7751G
Data Sheet 12 Rev. 1.0, 2008-06-27
5.4 Electrical Characteristics
I
SH1
= I
SH2
= I
SL1
= I
SL2
= 0 A; – 40 °C < T
j
< 150 °C; 8 V < V
S
< 18 V
unless otherwise specified
Pos. Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Current Consumption HS-switch
5.4.28 Quiescent current
I
S
–59μA IH1 = IH2 = 0 V
T
j
= 25 °C
––13μA IH1 = IH2 = 0 V
5.4.29 Supply current;
one HS-switch active
I
S
– 2.1 4.3 mA IH1 or IH2 = 5 V
V
S
= 12 V
5.4.30 Supply current;
both HS-switches active
I
S
– 4.3 8.6 mA IH1 and IH2 = 5 V
V
S
= 12 V
5.4.31 Leakage current of
high-side switch
I
SH LK
––6μA V
IH
= V
S
H
= 0 V
V
S
= 12 V
5.4.32 Leakage current through logic GND
in free wheeling condition
I
LKCL =
I
FH +
I
SH
––10mAI
FH
= 3 A
V
S
= 12 V
Current Consumption LS-switch
5.4.33 Input current
I
IL
–830μA V
IL
= 5 V;
normal operation
– 160 300 μA
V
IL
= 5 V;
failure mode
5.4.34 Leakage current of low-side switch
I
DL LK
–210μA V
IL
= 0 V
V
DSL
= 18 V
Under Voltage Lockout HS-switch
5.4.35 Switch-ON voltage
V
UVON
––4.8VV
S
increasing
5.4.36 Switch-OFF voltage
V
UVOFF
1.8– 3.5VV
S
decreasing
5.4.37 Switch ON/OFF hysteresis
V
UVHY
–1–VV
UVON
– V
UVOFF
Output stages
5.4.38 Inverse diode of high-side switch;
Forward-voltage
V
FH
–0.81.2VI
FH
= 3 A
5.4.39 Inverse diode of low-side switch;
Forward-voltage
V
FL
–0.81.2VI
FL
= 3 A
5.4.40 Static drain-source on-resistance of
high-side switch
R
DS ON H
–70–mΩ I
SH
=1A; V
S
= 12 V
T
j
= 25 °C
– 125 180 mΩ
I
SH
=1A; V
S
= 12 V
T
j
= 150 °C
5.4.41 Static drain-source
on-resistance of low-side switch
R
DS ON L
–45–mΩ I
SL
=1A; V
IL
= 5 V
T
j
= 25 °C
–75105mΩ
I
SL
=1A; V
IL
= 5 V
T
j
= 150 °C