Datasheet

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BTM7751G

TrilithIC

Data Sheet, Rev. 1.0, June 2008

Automotive Power

Summary of content (18 pages)

PAGE 1
Data Sheet, Rev. 1.
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BTM7751G Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 2.1 2.2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pin Assignment . . .
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TrilithIC 1 BTM7751G Overview Features • • • • • • • • • • • • • • • • • Quad D-MOS switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Low RDS ON High side: 70 mΩ typ. @ 25°C, 180 mΩ max. @ 150°C Low side: 45 mΩ typ. @ 25°C, 105 mΩ max. @ 150°C Maximum peak current: typ. 14 A @ 25 °C Very low quiescent current: typ.
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BTM7751G 2 Pin Configuration 2.1 Pin Assignment DL1 1 28 DL1 IL1 2 27 SL1 DL1 3 26 SL1 N.C. 4 25 DL1 DHVS 5 24 DHVS GND 6 23 SH1 IH1 7 LS-Leadframe 22 SH1 HS-Leadframe ST 8 21 SH2 IH2 9 20 SH2 DHVS 10 19 DHVS N.C. 11 18 DL2 LS-Leadframe Figure 1 Data Sheet DL2 12 17 SL2 IL2 13 16 SL2 DL2 14 15 DL2 Pin Assignment BTM7751G (Top View) 4 Rev. 1.
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BTM7751G Table 1 Pin Definitions and Functions Pin No. Symbol Function 1, 3, 25, 28 DL1 Drain of low-side switch1, lead frame 1 1) 2 IL1 Analog input of low-side switch1 4 N.C. not connected 5, 10, 19, 24 DHVS Drain of high-side switches and power supply voltage, lead frame 2 1) 6 GND Ground 7 IH1 Digital input of high-side switch1 8 ST Status of high-side switches; open Drain output 9 IH2 Digital input of high-side switch2 11 N.C.
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BTM7751G 2.
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BTM7751G 3 Block Diagram DHVS 5,10,19,24 8 ST Diagnosis IH1 7 Biasing and Protection Gate Driver RO1 IH2 9 RO2 Gate Driver 20,21 SH2 12,14,15,18 6 DL2 GND 22,23 1,3,25,28 Protection 2 IL1 SH1 DL1 Gate Driver Protection 13 Gate Driver IL2 26,27 SL1 Figure 3 Data Sheet 16,17 SL2 Block Diagram BTM7751G 7 Rev. 1.
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BTM7751G 4 Circuit Description 4.1 Input Circuit The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs are protected by ESD clamp-diodes. The inputs IL1 and IL2 are connected to the internal gate-driving units of the N-channel vertical power-MOS-FETs. 4.
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BTM7751G 4.7 Status Flag The status flag output is an open drain output with zener-diode which requires a pull-up resistor, as shown in the application circuit in Figure 4 “Application Example BTM7751G” on Page 15. Various errors as listed in the table “Diagnosis” are reported by switching the open drain output ST to low.
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BTM7751G 5 Electrical Characteristics 5.1 Absolute Maximum Ratings Absolute Maximum Ratings1) – 40 °C < Tj < 150 °C Pos. Parameter Symbol Limit Values Unit Remarks min. max. VS VS(SCP) – 0.3 42 V – 28 V IS IIH VIH –7 3) A TA = 25°C; tP < 100 ms –5 5 mA Pin IH1 and IH2 – 10 16 V Pin IH1 and IH2 VST IST – 0.3 5.4 V –5 5 mA Pin ST – V 30 V – 20 V IDL VIL –7 3) A VIL = 0 V; ID ≤ 1 mA VIL = 5 V VIL = 10 V TA = 25°C; tP < 100 ms – 0.
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BTM7751G 5.2 Pos. Functional Range Parameter Symbol Limit Values min. max. Unit Remarks 5.2.20 Supply voltage VS VUVOFF 42 V After VS rising above VUVON 5.2.21 Input voltage HS – 0.3 15 V – 5.2.22 Input voltage LS – 0.3 10 V – 5.2.23 Status output current 0 2 mA – 5.2.24 Junction temperature VIH VIL IST Tj – 40 150 °C – Note: Within the functional range the IC operates as described in the circuit description.
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BTM7751G 5.4 Electrical Characteristics ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. – 5 9 μA IH1 = IH2 = 0 V Tj = 25 °C – – 13 μA IH1 = IH2 = 0 V 2.1 4.3 mA Current Consumption HS-switch 5.4.28 Quiescent current IS Supply current; one HS-switch active IS – 5.4.30 Supply current; both HS-switches active IS – 4.3 8.
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BTM7751G ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. 15 19 23 A Tj = – 40 °C – 14 – A Tj = + 25 °C 8 10 13 A Tj = + 150 °C RO 8 15 35 kΩ VDSL = 3 V ISCP L 23 28 34 A Tj = – 40 °C – 22 – A Tj = 25 °C 11.5 14 18 A Tj = 150 °C Short Circuit of high-side switch to GND 5.4.
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BTM7751G ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 150 °C; 8 V < VS < 18 V unless otherwise specified Pos. Parameter Symbol Limit Values Unit Test Condition min. typ. max. tON tOFF dV/dtON -dV/dtOFF – 85 180 μs – 80 180 μs – – 1.2 V/μs – – 1.6 V/μs – 60 150 μs – 60 150 μs 1) Switching times of high-side switch 5.4.53 Turn-ON-time to 90% VSH 5.4.54 Turn-OFF-time to 10% VSH 5.4.55 Slew rate on 10 to 30% VSH 5.4.
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BTM7751G 6 Application Information Note: The following simplified application examples are given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device.
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BTM7751G x 8˚ ma 7.6 -0.2 1) +0.09 0.35 x 45˚ 0.23 2.65 max 2.45 -0.2 Package Outlines 0.2 -0.1 7 0.4 +0.8 1.27 0.35 +0.15 2) 28 1 10.3 ±0.3 0.1 0.2 28x 15 18.1 -0.4 1) 14 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max rer side 2) Does not include dambar protrusion of 0.
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BTM7751G 8 Revision History Rev. Date Changes 1.0 2008-06-27 Initial Version Data Sheet 17 Rev. 1.
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Edition 2008-06-27 Published by Infineon Technologies AG 81726 Munich, Germany © 6/27/08 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.