Datasheet

Datasheet 13 Rev. 1.0, 2008-07-07
BTM7710GP
Short Circuit of high-side switch to GND
5.4.18 Initial peak SC current
t
del
= 100 µs; V
S
= 12 V; V
DSH
= 12V
I
SCP H
15 18 20 A T
j
= – 40 °C
–15–A
T
j
= + 25 °C
10 12 15 A
T
j
= + 110 °C
1)
Short Circuit of high-side switch to V
S
5.4.19 Output pull-down-resistor
R
O
81535kΩ V
DSL
= 3 V
Thermal Shutdown
1)
5.4.20 Thermal shutdown junction
temperature
T
j SD
155 180 190 °C–
5.4.21 Thermal switch-on junction
temperature
T
j SO
150 170 180 °C–
5.4.22 Temperature hysteresis
ΔΤ –10–°C ΔΤ = T
jSD
– T
jSO
Status Flag Output ST of high-side switch
5.4.23 Low output voltage
V
ST L
–0.20.6VI
ST
= 1.6 mA
5.4.24 Leakage current
I
ST LK
––10μA V
ST
= 5 V
5.4.25 Zener-limit-voltage
V
ST Z
5.4 – – V I
ST
= 1.6 mA
Switching times of high-side switch
1)
5.4.26 Turn-ON-time to 90% V
SH
t
ON
–75160μsR
Load
= 12 Ω
V
S
= 12 V
5.4.27 Turn-OFF-time to 10%
V
SH
t
OFF
–60160μs
5.4.28 Slew rate on 10 to 30%
V
SH
dV/d
tON
––1.8V/μs
5.4.29 Slew rate off 70 to 40%
V
SH
-dV/d
tOFF
––2.1V/μs
Switching times of low-side switch
1)
5.4.30 Turn-ON Delay Time
t
d(on)
–5–nsresistive load
I
SL
= 3A; V
DSL
=12V
V
IL
= 5V; R
G
= 16Ω
5.4.31 Rise Time
t
r
–25–ns
5.4.32 Switch-OFF Delay Time
t
d(off)
–15–ns
5.4.33 Fall Time
t
f
–25–ns
Gate charge of low-side switch
1)
5.4.34 Input to source charge Q
IS
–4–nCI
SL
= 3 A; V
DSL
=12 V
5.4.35 Input to drain charge
Q
ID
–8–nCI
SL
= 3 A; V
DSL
=12 V
5.4.36 Input charge total
Q
I
–1740nCI
SL
= 3 A; V
DSL
=12 V
V
IL
= 0 to 5 V
5.4.37 Input plateau voltage
V
(plateau)
–2.5- VI
SL
= 3 A; V
DSL
=12 V
1)Not subject to production test; specified by design
I
SH1
= I
SH2
= I
SL1
= I
SL2
= 0 A; – 40 °C < T
j
< 110 °C; 8 V < V
S
< 18 V
unless otherwise specified
Pos. Parameter Symbol Limit Values Unit Test Condition
min. typ. max.