Datasheet

2010-01-27
Page 3
BSS87
Rev. 1.41
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
³2*I
D
*R
DS(on)max
,
I
D
=0.21A
0.16 0.33 - S
Input capacitance C
iss
V
GS
=0, V
DS
=25V,
f=1MHz
- 77.5 97 pF
Output capacitance C
oss
- 11.2 14
Reverse transfer capacitance C
rss
- 5.8 7.3
Turn-on delay time t
d(on)
V
DD
=120V, V
GS
=10V,
I
D
=0.28A, R
G
=6W
- 3.7 5.5 ns
Rise time t
r
- 3.5 5.2
Turn-off delay time t
d(off)
- 17.6 26.4
Fall time t
f
- 27.3 41
Gate Charge Characteristics
Gate to source charge Q
gs
V
DD
=192V, I
D
=0.26A - 0.14 0.21 nC
Gate to drain charge Q
gd
- 1.7 2.5
Gate charge total Q
g
V
DD
=192V, I
D
=0.26A,
V
GS
=0 to 10V
- 3.7 5.5
Gate plateau voltage V
(plateau)
V
DD
=192V, I
D
= 0.26 A - 2.7 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C - - 0.26 A
Inv. diode direct current, pulsed I
SM
- - 1.04
Inverse diode forward voltage V
SD
V
GS
=0, I
F
= I
S
- 0.82 1.2 V
Reverse recovery time t
rr
V
R
=120V, I
F
=
l
S
,
di
F
/dt=100A/μs
- 53.6 80.4 ns
Reverse recovery charge Q
rr
- 101 152 nC