Datasheet

2011-07-11
Rev 2.7 Page 7
BSS84P
13 Typ. avalanche energy
E
AS
= f (T
A
), parameter:
I
D
= -0.17 A , V
DD
= -25 V, R
GS
= 25
25 45 65 85 105 125
°C
165
T
A
0
0.5
1
1.5
2
mJ
3
E
AS
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I
D
= -0.17 A pulsed; T
j
= 25 °C
0 0.2 0.4 0.6 0.8 1 1.2
nC
1.5
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16
BSS 84 P
V
GS
0,8
V
DS max
DS max
V
0,2
15 Drain-source breakdown voltage
V
(BR)DSS
= f (T
A
)
-60 -20 20 60 100
°C
180
T
A
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
BSS 84 P
V
(BR)DSS