Datasheet

2011-07-11
Rev 2.7 Page 3
BSS84P
Electrical Characteristics, at T
A
= 25 °C, unless otherwise specified
Parameter
Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=-0.14A
0.065 0.13 - S
Input capacitance C
iss
V
GS
=0, V
DS
=-25V,
f=1MHz
- 15 19 pF
Output capacitance C
oss
- 6 8
Reverse transfer capacitance C
rss
- 2 3
Turn-on delay time t
d(on)
V
DD
=-30V, V
GS
=-4.5V,
I
D
=-0.14A, R
G
=25
- 6.7 10 ns
Rise time t
r
- 16.2 24.3
Turn-off delay time t
d(off)
- 8.6 12.9
Fall time t
f
- 20.5 30.8
Gate Charge Characteristics
Gate to source charge
Q
gs
V
DD
=-48V, I
D
=-0.17A - 0.25 0.37 nC
Gate to drain charge Q
gd
- 0.3 0.45
Gate charge total Q
g
V
DD
=-48V, I
D
=-0.17A,
V
GS
=0 to -10V
- 1 1.5
Gate plateau voltage V(plateau)
V
DD
=-48V, I
D
=-0.17A - -3.42 - V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
A
=25°C - - -0.17 A
Inv. diode direct current, pulsed
I
SM
- - -0.68
Inverse diode forward voltage V
SD
V
GS
=0, I
F
=-0.17A - -0.93 -1.24 V
Reverse recovery time t
rr
V
R
=-30V, I
F
=l
S
,
di
F
/dt=100A/µs
- 23 34 ns
Reverse recovery charge Q
rr
- 10 15 nC