Datasheet

2012-03-30
Rev. 1.5 Page 8
BSS 83 P
Avalanche energy
E
AS
= f ( T
j
)
para.:
I
D
= -0.33 A , V
DD
= -25 V, R
GS
= 25
25 45 65 85 105 125
°C
165
T
j
0
1
2
3
4
5
6
7
8
mJ
10
E
AS
Typ. gate charge
V
GS
=
f ( Q
Gate
)
parameter:
I
D
= -0.33 A pulsed
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
nC
3.4
Q
Gate
0
-2
-4
-6
-8
-10
-12
V
-16
BSS 83 P
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS
= f ( T
j
)
-60 -20 20 60 100
°C
180
T
j
-54
-56
-58
-60
-62
-64
-66
-68
V
-72
BSS 83 P
V
(BR)DSS