Datasheet

2012-03-30
Rev. 1.5 Page 7
BSS 83 P
Drain-source on-state resistance
R
DS(on)
= f ( T
j
)
parameter :
I
D
= -0.33 A, V
GS
= -10 V
-60 -20 20 60 100
°C
180
T
j
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.5
BSS 83 P
R
DS(on)
typ
98%
Gate threshold voltage
V
GS(th)
= f ( T
j
)
parameter:
V
GS
= V
DS
, I
D
= -80 µA
-60 -20 20 60 100
°C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
2%
-60 -20 20 60 100
°C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
typ
-60 -20 20 60 100
°C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
98%
-60 -20 20 60 100
°C
160
T
j
0.0
-0.5
-1.0
-1.5
-2.0
V
-3.0
V
GS(th)
Typ. capacitances
C = f ( V
DS
)
parameter:
V
GS
=0V, f =1 MHz
0 -5 -10 -15 -20 -25
V
-35
V
DS
0
10
1
10
2
10
3
10
pF
C C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F
= f (V
SD
)
parameter:
T
j
, t
p = 80 µs
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4
V
-3.0
V
SD
-2
-10
-1
-10
0
-10
1
-10
A
BSS 83 P
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)