Datasheet

2012-03-30
Rev. 1.5 Page 6
BSS 83 P
Typ. drain-source-on-resistance
R
DS(on)
= f ( I
D
)
parameter:
V
GS
0.00 -0.10 -0.20 -0.30 -0.40 -0.50
A
-0.65
I
D
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.5
BSS 83 P
R
DS(on)
a
V
GS
[V] =
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-5.5
h
h
-6.0
i
i
-6.5
j
j
-7.0
k
k
-8.0
l
l
-10.0
Typ. output characteristic
I
D
= f ( V
DS
); T
j
=25°C
parameter:
t
p
= 80 µs
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
V
-5.0
V
DS
0.00
-0.10
-0.20
-0.30
-0.40
-0.50
-0.60
A
-0.80
BSS 83 P
I
D
V
GS
[V]
a
a -2.5
b
b -3.0
c
c -3.5
d
d -4.0
e
e -4.5
f
f -5.0
g
g -5.5
h
h -6.0
i
i -6.5
j
j -7.0
k
k -8.0
l
P
tot
= 0W
l -10.0
Typ. transfer characteristics I
D
= f ( V
GS
)
V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 80 µs
0.0 -1.0 -2.0 -3.0 -4.0
V
-6.0
V
GS
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
A
-1.2
I
D
Typ. forward transconductance
g
fs
= f( I
D
); T
j
=25°C
parameter:
g
fs
0.00 -0.10 -0.20 -0.30 -0.40 -0.50
A
-0.70
ID
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
S
0.70
gfs