Datasheet

2012-03-30
Rev. 1.5 Page 4
BSS 83 P
Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified
Unit
ValuesSymbolParameter
min. typ. max.
Dynamic Characteristics
Gate to source charge
V
DD
= -48 V, I
D
= -0.33 A
- Q
gs
nC0.180.12
Gate to drain charge
V
DD
= -48 , I
D
= -0.33 A
Q
gd
1.1 1.65-
3.57- Q
g
Gate charge total
V
DD
= -48 V, I
D
= -0.33 A, V
GS
= 0 to -10 V
2.38
Gate plateau voltage
V
DD
= -48 V , I
D
= -0.33 A
V
(plateau)
- -2.94 - V
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A
= 25 °C
I
S
- - -0.33 A
Inverse diode direct current,pulsed
T
A
= 25 °C
I
SM
- - -1.32
Inverse diode forward voltage
V
GS
= 0 V, I
F
= -0.33
V
SD
- -0.84 -1.1 V
Reverse recovery time
V
R
= -30 V, I
F
= I
S
, d i
F
/d t = 80 A/µs
t
rr
- 59.4 89 ns
Reverse recovery charge
V
R
= -30 V, I
F
= l
S
, d i
F
/d t = 80 A/µs
Q
rr
- 37.5 56 nC