Datasheet

2012-03-30
Rev. 1.5 Page 1
BSS 83 P
SIPMOS

Small-Signal-Transistor
Features
P-Channel
Enhancement mode
Avalanche rated
Logic Level
d
v /d t rated
Product Summary
Drain source voltage
V V
DS
-60
Drain-source on-state resistance R
DS(on)
2
Continuous drain current A I
D
-0.33
1
2
3
VPS05161
Type
Package
Tape and Reel
BSS 83 P
PG-SOT-23 H
6327: 3000pcs/r.
Marking
YAs
Pin 1
PIN 2
PIN 3
G
S
D
Maximum Ratings,at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Unit
Value
-0.33
-0.27
A
Continuous drain current
T
A
= 25 °C
T
A
= 70 °C
I
D
Pulsed drain current
T
A
= 25 °C
I
D puls
-1.32
Avalanche energy, single pulse
I
D
= -0.33 A , V
DD
= -25 V, R
GS
= 25
9.5
mJ
E
AS
Avalanche energy, periodic limited by T
jmax
E
AR
0.036
d v /d t
6
Reverse diode d v /d t
I
S
= -0.33 A, V
DS
= -48 V, d i /d t = 200 A/µs,
T
jmax
= 150 °C
kV/µs
Gate source voltage
V
GS
20
V
Power dissipation
T
A
= 25 °C
P
tot
0.36
W
Operating and storage temperature
T
j
,
T
stg
-55...+150
°C
IEC climatic category; DIN IEC 68-1 55/150/56
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
ESD Class; JESD22-A114-HBM
Class 0