Datasheet

BSS169
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=0.05 A; V
GS
=0 V V
GS(th)
=f(T
j
); V
DS
=3 V; I
D
=50 µA
parameter: I
D
typ
98 %
0
4
8
12
16
20
24
-60 -20 20 60 100 140 180
R
DS(on)
[Ω]
T
j
[°C]
typ
98 %
2 %
-3.5
-3.1
-2.7
-2.3
-1.9
-1.5
-1.1
-60 -20 20 60 100 140 180
V
GS(th)
[V]
T
j
[°C]
Rev. 1.8 page 6 ########
11 Threshold voltage bands 12 Typ. capacitances
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 °C C=f(V
DS
); V
GS
=-10 V; f=1 MHz
50 µA
J
KLMN
0.01
0.1
1
10
-3 -2.5 -2 -1.5 -1
I
D
[mA]
V
GS
[V]
typ
98 %
0
4
8
12
16
20
24
-60 -20 20 60 100 140 180
R
DS(on)
[Ω]
T
j
[°C]
typ
98 %
2 %
-3.5
-3.1
-2.7
-2.3
-1.9
-1.5
-1.1
-60 -20 20 60 100 140 180
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
0
10
1
10
2
10
3
0102030
C [pF]
V
DS
[V]
Rev. 1.8 page 6 ########